Evolution of the SrTiO3-MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

ACS Applied Materials and Interfaces

Volumn 7, Issue 21, 2015, Pages 11309-11314

  Du, Yuanmin ^a   Peng, Hai Yang ^b   Mao, Hongying ^c,d   Jin, Ke Xin ^e   Wang, Hong ^a   Li, Feng ^a   Gao, Xing Yu ^c,f   Chen, Wei ^c   Wu, Tom ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b TOSHIBA CORPORATION   (Japan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d HANGZHOU NORMAL UNIVERSITY   (China)

^e NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^f SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

Author keywords

charge transfer; MoO3; photoelectron spectroscopy; SrTiO3; work function

Indexed keywords

CHARGE TRANSFER; ELECTRONIC STRUCTURE; MOLYBDENUM OXIDE; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; STRONTIUM TITANATES; WORK FUNCTION;

ENERGY-BAND ALIGNMENT; INTERFACE ELECTRONIC STRUCTURE; MOO3; SITU PHOTOELECTRON SPECTROSCOPIES; SRTIO3; SURFACE AND INTERFACES; SURFACE ENGINEERING; WORK-FUNCTION DIFFERENCE;

TITANIUM COMPOUNDS;

EID: 84930672715     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01698     Document Type: Article

References (58)

1. Mannhart, J.; Schlom, D. G. Oxide Interfaces-An Opportunity for Electronics Science 2010, 327, 1607-1611
2. -1 Nat. Mater. 2010, 9, 482-484
3. 3 Heterointerface Nature 2004, 427, 423-326
4. 3 Nature 2011, 469, 189-193
5. 3 Surface Nat. Mater. 2011, 10, 114-118
6. 3 Nat. Mater. 2006, 5, 312-320
7. 3 Appl. Phys. Lett. 2011, 98, 122102
8. x Thin Films for Nonvolatile Memory Applications Appl. Phys. Lett. 2006, 88, 082904
9. 3 Heterostructures Phys. Rev. X 2013, 3, 041027
10. Peng, H. Y.; Pu, L.; Wu, J. C.; Cha, D.; Hong, J. H.; Lin, W. N.; Li, Y. Y.; Ding, J. F.; David, A.; Li, K.; Wu, T. Effects of Electrode Material and Configuration on the Characteristics of Planar Resistive Switching Devices APL Mater. 2013, 1, 052106
11. 3 Nat. Commun. 2013, 4, 1371
12. Van Benthem, K.; Elsäesser, C.; French, R. H. Bulk Electronic Structure of SrTiO3: Experiment and Theory J. Appl. Phys. 2001, 90, 6156-6164
13. 3 AIP Adv. 2012, 2, 042131
14. 3 Adv. Funct. Mater. 2013, 23, 4977-4984
15. Sawa, A. Resistive Switching in Transition Metal Oxides Mater. Today 2008, 11, 28-36
16. Du, Y. M.; Pan, H.; Wang, S. J.; Wu, T.; Feng, Y. P.; Pan, J. S.; Wee, A. T. S. Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device ACS Nano 2012, 6, 2517-2523
17. Zazpe, R.; Stoliar, P.; Golmar, F.; Llopis, R.; Casanova, F.; Hueso, L. E. Resistive Switching in Rectifying Interfaces of Metal-Semiconductor-Metal Structures Appl. Phys. Lett. 2013, 103, 073114
18. 3 Memristors ACS Appl. Mater. Interfaces 2014, 6, 8575-8579
19. 3 ACS Appl. Mater. Interfaces 2013, 5, 11668-11672
20. 2 Films Studied by Conductive Atomic Force Microscopy and Kelvin Probe Force Microscopy AIP Adv. 2013, 3, 082107
21. 3 ACS Appl. Mater. Interfaces 2013, 5, 1213-1217
22. Peng, H. Y.; Li, Y. F.; Lin, W. N.; Wang, Y. Z.; Gao, X. Y.; Wu, T. Deterministic Conversion between Memory and Threshold Resistive Switching via Tuning the Strong Electron Correlation Sci. Rep. 2012, 2, 442
23. Sze, S. M. Semiconductor Devices, Physics, and Technology, 2 nd ed; Wiley & Sons, Inc.: New York, 2002.
24. Chen, W.; Qi, D. C.; Gao, X. Y.; Wee, A. T. S. Surface Transfer Doping of Semiconductors Prog. Surf. Sci. 2009, 84, 279-321
25. Patil, P. S.; Patil, R. S. Studies on Spray Pyrolyzed Molybdenum Trioxide Thin Films Bull. Mater. Sci. 1995, 18, 911-916
26. 3 Nanobelts as Anode Materials for Lithium-Ion Batteries J. Power Sources 2010, 195, 2372-2376
27. 3/SiC Schottky Diode Based Hydrogen Gas Sensors Appl. Phys. Lett. 2009, 94, 013504
28. Bessonov, A. A.; Kirikova, M. N.; Petukhov, D. I.; Allen, M.; Ryhänen, T.; Bailey, M. J. A. Layered Memristive and Memcapacitive Switches for Printable Electronics Nat. Mater. 2015, 14, 199-204
29. 3 Thick Films as Hole Injection and Short-Circuit Barrier Layer in Large-Area Organic Light-Emitting Devices Appl. Phys. Express 2014, 7, 111601
30. 3 Interlayer to Hole-Injection at Iron Phthalocyanine/ITO Interface Evidenced by Photoemission Study Appl. Surf. Sci. 2013, 271, 352-356
31. Fu, Q.; Chen, J. S.; Shi, C. S.; Ma, D. G. Room-Temperature Sol-Gel Derived Molybdenum Oxide Thin Films for Efficient and Stable Solution-Processed Organic Light-Emitting Diodes ACS Appl. Mater. Interfaces 2013, 5, 6024-6029
32. Douvas, A. M.; Vasilopoulou, M.; Georgiadou, D. G.; Soultati, A.; Davazoglou, D.; Vourdas, N.; Giannakopoulos, K. P.; Kontos, A. G.; Kennou, S.; Argitis, P. Sol-gel Synthesized, Low-Temperature Processed, Reduced Molybdenum Peroxides for Organic Optoelectronics Applications J. Mater. Chem. C 2014, 2, 6290-6300
33. Wong, K. H.; Ananthanarayanan, K.; Luther, J.; Balaya, P. Origin of Hole Selectivity and the Role of Defects in Low-Temperature Solution-Processed Molybdenum Oxide Interfacial Layer for Organic Solar Cells J. Phys. Chem. C 2012, 116, 16346-16351
34. Hancox, I.; Rochford, L. A.; Clare, D.; Walker, M.; Mudd, J. J.; Sullivan, P.; Schumann, S.; McConville, C. F.; Jones, T. S. Optimization of a High Work Function Solution Processed Vanadium Oxide Hole-Extracting Layer for Small Molecule and Polymer Organic Photovoltaic Cells J. Phys. Chem. C 2013, 117, 49-57
35. 3 Hole Extraction Layer on Oxygen Plasma-Treated Indium Tin Oxide in Organic Photovoltaics Sol. Energy Mater. Sol. Cells 2013, 116, 94-101
36. 3 Buffer Layer Appl. Phys. Lett. 2008, 93, 193307
37. 2 Nanofiber Heterojunctions: Controlled Fabrication and Enhanced Photocatalytic Properties ACS Appl. Mater. Interfaces 2014, 6, 9004-9012
38. x Interlayer on the Open-Circuit Voltage in Organic Photovoltaic Cells Appl. Phys. Lett. 2013, 103, 053302
39. 3 in the Enhancement of Hole Injection in Organic Thin Films Appl. Phys. Lett. 2009, 95, 123301
40. 60/ p -Sexiphenyl Organic Heterojunction Interface J. Chem. Phys. 2011, 134, 154706
41. 3 (0 0 1) Surface Surf. Sci. 2001, 473, 59-70
42. 3 Surf. Sci. 2002, 515, 61-74
43. 3 J. Vac. Sci. Technol. (New York, NY) 1978, 15, 534-537
44. Chen, M.; Wang, X.; Yu, Y. H.; Pei, Z. L.; Bai, X. D.; Sun, C.; Huang, R. F.; Wen, L. S. X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy Studies of Al-Doped ZnO Films Appl. Surf. Sci. 2000, 158, 134-140
45. Yang, G. J.; Gao, D. Q.; Shi, Z. H.; Zhang, Z. H.; Zhang, J.; Zhang, J. L.; Xue, D. S. Room Temperature Ferromagnetism in Vacuum-Annealed CoO Nanospheres J. Phys. Chem. C 2000, 114, 21989-21993
46. 3: Importance of Oxygen Vacancies Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 86, 195119
47. 3 by Means of Aberration Corrected Electron Microscopy Ultramicroscopy 2013, 127, 109-113
48. x (2 < x < 2.75) Films J. Appl. Phys. 2005, 97, 083539
49. 3 J. Chem. Phys. 1982, 76, 780-786
50. Robertson, J.; Chen, C. W. Schottky Barrier Heights of Tantalum Oxide, Barium Strontium Titanate, Lead Ttitanate, and Strontium Bismuth Tantalite Appl. Phys. Lett. 1999, 74, 1168-1170
51. Wu, C. I.; Lin, C. T.; Lee, G. R.; Cho, T. Y.; Wu, C. C. Pi, T. W. Electronic and Chemical Properties of Molybdenum Oxide Doped Hole Injection Layers in Organic Light Emitting Diodes J. Appl. Phys. 2009, 105, 033717
52. Kröger, M.; Hamwi, S.; Meyer, J.; Riedl, T.; Kowalsky, W.; Kahn, A. P-Type Doping of Organic Wide Band Gap Materials by Transition Metal Oxides: A Case-Study on Molybdenum Trioxide Org. Electron. 2009, 10, 932-938
53. Kanai, K.; Koizumi, K.; Ouchi, S.; Tsukamoto, Y.; Sakanoue, K.; Ouchi, Y.; Seki, K. Electronic Structure of Anode Interface with Molybdenum Oxide Buffer Layer Org. Electron. 2010, 11, 188-194
54. 3 (0 1 0) Surface: Density Functional Theory Cluster Studies and Photoemission Experiments Surf. Sci. 2001, 489, 107-125
55. Lee, H.; Cho, S. W.; Han, K.; Jeon, P. E.; Whang, C.-N.; Jeong, K.; Cho, K.; Yi, Y. The Origin of the Hole Injection Improvements at Indium Tin Oxide/Molybdenum Trioxide/ N, N ′-bis(1-Naphthyl)- N, N ′-diphenyl-1,1′-biphenyl-4,4′-diamine Interfaces Appl. Phys. Lett. 2008, 93, 043308
56. Cahen, D.; Kahn, A. Electron Energetics at Surfaces and Interfaces: Concepts and Experiments Adv. Mater. 2003, 15, 271-277
57. 3 Interface Transport in an Electric Double-Layer Transistor Adv. Mater. Interfaces 2014, 1, 1300001
58. Tersoff, J. Schottky Barrier Heights and the Continuum of Gap States Phys. Rev. Lett. 1984, 52, 465-468