SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

Resistive switching in rectifying interfaces of metal-semiconductor-metal structures

(6) Zazpe, R a Stoliar, P a,b,c Golmar, F a,d Llopis, R a Casanova, F a,e Hueso, L E a,e

a CIC NANOGUNE (Spain)

b UNIVERSITÉ DE NANTES (France)

c UNIVERSIDAD NACIONAL DE SAN MARTÍN (Argentina)

d INTI CONICET (Argentina)

e BASQUE FOUNDATION FOR SCIENCE (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVE; ELECTRICAL CHARACTERISTIC; EXPERIMENTAL METHODS; INDIVIDUAL CHARACTERISTICS; MATHEMATICAL FRAMEWORKS; METAL SEMICONDUCTOR INTERFACE; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL STRUCTURES;

METALS; OHMIC CONTACTS; SWITCHING SYSTEMS;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 84882373600 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4818730 Document Type: Article

Times cited : (13)

References (29)

1
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11, 28-36 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , pp. 28-36
- Sawa, A.¹

2
- 84863507287
- 10.1088/0034-4885/75/7/076502
- D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and C. S. Hwang, Rep. Prog. Phys. 75, 076502 (2012). 10.1088/0034-4885/75/7/076502
- (2012) Rep. Prog. Phys. , vol.75 , pp. 076502
- Jeong, D.S.¹ Thomas, R.² Katiyar, R.S.³ Scott, J.F.⁴ Kohlstedt, H.⁵ Petraru, A.⁶ Hwang, C.S.⁷

3
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 833-840 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 833-840
- Waser, R.¹ Aono, M.²

4
- 84859999731
- 10.4249/scholarpedia.11414
- M. Rozenberg, Scholarpedia J. 6, 11414 (2011). 10.4249/scholarpedia.11414
- (2011) Scholarpedia J. , vol.6 , pp. 11414
- Rozenberg, M.¹

5
- 77951622926
- 10.1038/nmat2748
- E. Linn, R. Rosezin, C. Kügeler, and R. Waser, Nature Mater. 9, 403-406 (2010). 10.1038/nmat2748
- (2010) Nature Mater. , vol.9 , pp. 403-406
- Linn, E.¹ Rosezin, R.² Kügeler, C.³ Waser, R.⁴

6
- 61349191502
- 10.1063/1.3068754
- H. Shima, N. Zhong, and H. Akinaga, Appl. Phys. Lett. 94, 082905 (2009). 10.1063/1.3068754
- (2009) Appl. Phys. Lett. , vol.94 , pp. 082905
- Shima, H.¹ Zhong, N.² Akinaga, H.³

7
- 84857340323
- 10.1557/mrs.2012.2
- D. B. Strukov and H. Kohlstedt, MRS Bull. 37, 108-114 (2012). 10.1557/mrs.2012.2
- (2012) MRS Bull. , vol.37 , pp. 108-114
- Strukov, D.B.¹ Kohlstedt, H.²

8
- 33947268040
- 10.1103/PhysRevLett.98.116601
- M. Quintero, P. Levy, A. G. Leyva, and M. J. Rozenberg, Phys. Rev. Lett. 98, 116601 (2007). 10.1103/PhysRevLett.98.116601
- (2007) Phys. Rev. Lett. , vol.98 , pp. 116601
- Quintero, M.¹ Levy, P.² Leyva, A.G.³ Rozenberg, M.J.⁴

9
- 79960642086
- 10.1038/nmat3070
- M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, and K. Kim, Nature Mater. 10, 625-630 (2011). 10.1038/nmat3070
- (2011) Nature Mater. , vol.10 , pp. 625-630
- Lee, M.-J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Chang, M.⁵ Hur, J.H.⁶ Kim, Y.-B.⁷ Kim, C.-J.⁸ Seo, D.H.⁹ Seo, S.¹⁰ Chung, U.-I.¹¹ Yoo, I.-K.¹² Kim, K.¹³

10
- 84863158824
- 10.1557/mrs.2011.356
- J. J. Yang, I. H. Inoue, T. Mikolajick, and C. S. Hwang, MRS Bull. 37, 131-137 (2012). 10.1557/mrs.2011.356
- (2012) MRS Bull. , vol.37 , pp. 131-137
- Yang, J.J.¹ Inoue, I.H.² Mikolajick, T.³ Hwang, C.S.⁴

11
- 46749093701
- 10.1038/nnano.2008.160
- J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 3, 429-433 (2008). 10.1038/nnano.2008.160
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429-433
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

12
- 77949389979
- 10.1088/0957-4484/21/12/125201
- A. Shih, W. Zhou, J. Qiu, H. J. Yang, S. Chen, Z. Mi, and I. Shih, Nanotechnology 21, 125201 (2010). 10.1088/0957-4484/21/12/125201
- (2010) Nanotechnology , vol.21 , pp. 125201
- Shih, A.¹ Zhou, W.² Qiu, J.³ Yang, H.J.⁴ Chen, S.⁵ Mi, Z.⁶ Shih, I.⁷

13
- 77954962853
- 10.1103/PhysRevB.81.115101
- M. J. Rozenberg, M. J. Sanchez, R. Weht, C. Acha, F. Gomez-Marlasca, and P. Levy, Phys. Rev. B 81, 115101 (2010). 10.1103/PhysRevB.81.115101
- (2010) Phys. Rev. B , vol.81 , pp. 115101
- Rozenberg, M.J.¹ Sanchez, M.J.² Weht, R.³ Acha, C.⁴ Gomez-Marlasca, F.⁵ Levy, P.⁶

14
- 70349147048
- 10.1088/0957-4484/20/37/375201
- D. S. Jeong, H. Schroeder, and R. Waser, Nanotechnology 20, 375201 (2009). 10.1088/0957-4484/20/37/375201
- (2009) Nanotechnology , vol.20 , pp. 375201
- Jeong, D.S.¹ Schroeder, H.² Waser, R.³

15
- 34147108217
- 10.1103/PhysRevLett.98.146403
- Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007). 10.1103/PhysRevLett.98.146403
- (2007) Phys. Rev. Lett. , vol.98 , pp. 146403
- Nian, Y.B.¹ Strozier, J.² Wu, N.J.³ Chen, X.⁴ Ignatiev, A.⁵

16
- 84860505051
- 10.1002/adma.201200382
- M. Ungureanu, R. Zazpe, F. Golmar, P. Stoliar, R. Llopis, F. Casanova, and L. E. Hueso, Adv. Mater. 24, 2496-2500 (2012). 10.1002/adma.201200382
- (2012) Adv. Mater. , vol.24 , pp. 2496-2500
- Ungureanu, M.¹ Zazpe, R.² Golmar, F.³ Stoliar, P.⁴ Llopis, R.⁵ Casanova, F.⁶ Hueso, L.E.⁷

17
- 79551633338
- 10.1063/1.3537957
- F. Gomez-Marlasca, N. Ghenzi, M. J. Rozenberg, and P. Levy, Appl. Phys. Lett. 98, 042901 (2011). 10.1063/1.3537957
- (2011) Appl. Phys. Lett. , vol.98 , pp. 042901
- Gomez-Marlasca, F.¹ Ghenzi, N.² Rozenberg, M.J.³ Levy, P.⁴

18
- 0004005306
- 3rd ed. (Wiley-Interscience, New York).
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley-Interscience, New York, 2007).
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

19
- 10044237971
- 10.1063/1.1812580
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073-4075 (2004). 10.1063/1.1812580
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073-4075
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

20
- 79251526171
- 10.1063/1.3372617
- N. Ghenzi, M. J. Sanchez, F. Gomez-Marlasca, P. Levy, and M. J. Rozenberg, J. Appl. Phys. 107, 093719 (2010). 10.1063/1.3372617
- (2010) J. Appl. Phys. , vol.107 , pp. 093719
- Ghenzi, N.¹ Sanchez, M.J.² Gomez-Marlasca, F.³ Levy, P.⁴ Rozenberg, M.J.⁵

21
- 56649108011
- 10.1016/j.mee.2008.09.021
- M. Y. Chan, T. Zhang, V. Ho, and P. S. Lee, Microelectron. Eng. 85, 2420-2424 (2008). 10.1016/j.mee.2008.09.021
- (2008) Microelectron. Eng. , vol.85 , pp. 2420-2424
- Chan, M.Y.¹ Zhang, T.² Ho, V.³ Lee, P.S.⁴

22
- 77951587543
- 10.1063/1.3357283
- P. Gonon, M. Mougenot, C. Vallee, C. Jorel, V. Jousseaume, H. Grampeix, and F. El Kamel, J. Appl. Phys. 107, 074507 (2010). 10.1063/1.3357283
- (2010) J. Appl. Phys. , vol.107 , pp. 074507
- Gonon, P.¹ Mougenot, M.² Vallee, C.³ Jorel, C.⁴ Jousseaume, V.⁵ Grampeix, H.⁶ El Kamel, F.⁷

23
- 64549149261
- in (IEEE), 10.1109/IEDM.2008.4796677
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, in Electron Devices Meeting, 2008. IEDM, IEEE International (IEEE, 2008), pp. 1-4. 10.1109/IEDM.2008.4796677
- (2008) Electron Devices Meeting, 2008. IEDM, IEEE International , pp. 1-4
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

24
- 72949116562
- 10.1109/LED.2009.2034670
- H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M. J. Tsai, and C. Lien, IEEE Electron Device Lett. 31, 44-46 (2010). 10.1109/LED.2009.2034670
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 44-46
- Lee, H.Y.¹ Chen, Y.S.² Chen, P.S.³ Wu, T.Y.⁴ Chen, F.⁵ Wang, C.C.⁶ Tzeng, P.J.⁷ Tsai, M.J.⁸ Lien, C.⁹

25
- 27344443406
- 10.1063/1.2119425
- K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. 87, 183505 (2005). 10.1063/1.2119425
- (2005) Appl. Phys. Lett. , vol.87 , pp. 183505
- Xiong, K.¹ Robertson, J.² Gibson, M.C.³ Clark, S.J.⁴

26
- 77952333571
- 10.1063/1.3416912
- X. Wu, D. B. Migas, X. Li, M. Bosman, N. Raghavan, V. E. Borisenko, and K. L. Pey, Appl. Phys. Lett. 96, 172901 (2010). 10.1063/1.3416912
- (2010) Appl. Phys. Lett. , vol.96 , pp. 172901
- Wu, X.¹ Migas, D.B.² Li, X.³ Bosman, M.⁴ Raghavan, N.⁵ Borisenko, V.E.⁶ Pey, K.L.⁷

27
- 80054991874
- 10.1063/1.3640806
- S. D. Ha and S. Ramanathan, J. Appl. Phys. 110, 071101 (2011). 10.1063/1.3640806
- (2011) J. Appl. Phys. , vol.110 , pp. 071101
- Ha, S.D.¹ Ramanathan, S.²

28
- 84882399054
- See supplementary material at http://dx.doi.org/10.1063/1.4818730 E-APPLAB-103-106333 for details on the numerical simulations.

29
- 77953489538
- 10.1063/1.3447795
- C. Vallée, P. Gonon, C. Jorel, and F. El Kamel, Appl. Phys. Lett. 96, 233504 (2010). 10.1063/1.3447795
- (2010) Appl. Phys. Lett. , vol.96 , pp. 233504
- Vallée, C.¹ Gonon, P.² Jorel, C.³ El Kamel, F.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.