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Volumn 116, Issue 31, 2012, Pages 16346-16351

Origin of hole selectivity and the role of defects in low-temperature solution-processed molybdenum oxide interfacial layer for organic solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; BULK HETEROJUNCTION; CRITICAL COMPONENT; DEVICE EFFICIENCY; DEVICE PERFORMANCE; ELECTRON TRANSPORT; GAP STATE; HIGH FILLS; INTERFACIAL LAYER; LOW TEMPERATURES; MAXIMUM VALUES; METHYL ESTERS; ORGANIC PHOTOVOLTAICS; ORGANIC SOLAR CELL; P TYPE SEMICONDUCTOR; PEDOT:PSS; POLY(STYRENE SULFONATE); POLY-3 ,4-ETHYLENEDIOXYTHIOPHENE; POLY-3-HEXYLTHIOPHENE; REFERENCE DEVICES; SOLUTION PROCESS; SOLUTION-PROCESSED; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

EID: 84864983969     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp303679y     Document Type: Article
Times cited : (81)

References (65)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.