Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Wu, Chih I ^a   Lin, Chang Ting ^a   Lee, Guan Ru ^a   Cho, Ting Yi ^a   Wu, Chung Chih ^a   Pi, Tun Wen ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL PROPERTIES; CIVIL AVIATION; DOPING (ADDITIVES); ELECTRON INJECTION; EMISSION SPECTROSCOPY; HOLE CONCENTRATION; HOLE TRAPS; LANTHANUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLYBDENUM; MOLYBDENUM COMPOUNDS; OXYGEN;

BARRIER LOWERING; CARRIER INJECTIONS; DOPED HOLES; GAP STATE; HOLE-INJECTION BARRIERS; MOLYBDENUM OXIDES; ORGANIC FILMS; ORGANIC LIGHT-EMITTING; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC MATERIALS; OXYGEN DEFICIENCIES; P-TYPE DOPING; X-RAY PHOTOEMISSION SPECTRUM;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 60449119080     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077170     Document Type: Article

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