P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

Organic Electronics

Volumn 10, Issue 5, 2009, Pages 932-938

  Kröger, Michael ^a   Hamwi, Sami ^b   Meyer, Jens ^b   Riedl, Thomas ^b   Kowalsky, Wolfgang ^b   Kahn, Antoine ^a  

^a Princeton University   (United States)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Charge transport; Doping; Electronic structures processes mechanisms; Inverse photoelectron spectroscopy; Organic electronics; Ultraviolet photoelectron spectroscopy

Indexed keywords

CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRON AFFINITY; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; MOLECULAR ORBITALS; NANOBELTS; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR DOPING; THIN FILMS; TRANSITION METAL OXIDES; TRANSITION METALS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

CURRENT TRANSPORT; DOPANT ACTIVATION; DOPING CONCENTRATION; HIGHEST OCCUPIED MOLECULAR ORBITAL; INVERSE-PHOTOELECTRON SPECTROSCOPIES; MOLYBDENUM TRIOXIDE; ORGANIC ELECTRONICS; WIDE BAND-GAP MATERIAL;

MOLYBDENUM OXIDE;

EID: 67649216558     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.05.007     Document Type: Article

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