The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/ N, N′ -bis(1-naphthyl)- N, N′ -diphenyl- 1, 1′ -biphenyl- 4, 4′ -diamine interfaces

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Lee, Hyunbok ^a   Cho, Sang Wan ^a,d   Han, Kyul ^a   Jeon, Pyung Eun ^a   Whang, Chung Nam ^a   Jeong, Kwangho ^a   Cho, Kwanghee ^b   Yi, Yeonjin ^c  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; HOLE TRAPS; INDIUM; MOLYBDENUM; ORGANIC LIGHT EMITTING DIODES (OLED); TIN; TITANIUM COMPOUNDS;

BAND GAPS; HOLE INJECTIONS; HOLE-INJECTION BARRIERS; IMPROVED PERFORMANCE; IN-SITU; INDIUM-TIN OXIDE; INTERFACIAL ELECTRONIC STRUCTURES; MOLYBDENUM TRIOXIDES; ORGANIC LIGHT-EMITTING DEVICES; X-RAY PHOTOEMISSION SPECTROSCOPY;

ELECTRON INJECTION;

EID: 49149127698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965120     Document Type: Article

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