Influence of dopant concentration on the electrochromic properties of tungsten oxide thin films

Electrochimica Acta

Volumn 174, Issue , 2015, Pages 302-314

  Meenakshi, M ^a   Gowthami, V ^a   Perumal, P ^a   Sivakumar, R ^b   Sanjeeviraja, C ^c  

^a ALAGAPPA GOVERNMENT ARTS COLLEGE   (India)

^b ALAGAPPA UNIVERSITY   (India)

^c ALAGAPPA CHETTIAR COLLEGE OF ENGINEERING AND TECHNOLOGY   (India)

Author keywords

Electrochromic; Laser Raman; PL; RF sputtering; SEM; V2< inf>O5< inf> doped WO3< inf> thin films

Indexed keywords

DOPING (ADDITIVES); EFFICIENCY; ELECTROCHROMISM; MAGNETRON SPUTTERING; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SUPERCOMPUTERS; THIN FILMS;

ELECTROCHROMIC PERFORMANCE; ELECTROCHROMIC PROPERTIES; ELECTROCHROMICS; LASER RAMAN; PL; RF MAGNETRON SPUTTERING METHOD; RF-SPUTTERING; TUNGSTEN OXIDE THIN FILMS;

SEMICONDUCTOR DOPING;

EID: 84930671899     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2015.05.187     Document Type: Article

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