Nitrogen-doped tungsten oxide nanowires: Low-temperature synthesis on Si, and electrical, optical, and field-emission properties

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Volumn 3, Issue 4, 2007, Pages 658-664

  Chang, Mu Tung ^a   Chou, Li Jen ^a   Chueh, Yu Lun ^a   Lee, Yu Chen ^a   Hsieh, Chin Hua ^a   Chen, Chii Dong ^b   Lan, Yann Wen ^b   Chen, Lih Juann ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

Doping; Field emission; Nanowires; Photoluminescence; Tungsten oxide

Indexed keywords

DOPING (ADDITIVES); FIELD EMISSION; NITROGEN; PHOTOLUMINESCENCE; SYNTHESIS (CHEMICAL); TUNGSTEN COMPOUNDS;

GASEOUS AMMONIA; PHOTOLUMINESCENCE MEASUREMENT; TUNGSTEN OXIDE;

NANOWIRES;

METAL NANOPARTICLE; NANOWIRE; NITROGEN; OXIDE; SILICON; TUNGSTEN; TUNGSTEN OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; ELECTRIC CONDUCTIVITY; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRIC CONDUCTIVITY; LIGHT; LUMINESCENCE; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; MODELS, CHEMICAL; NANOTECHNOLOGY; NANOWIRES; NITROGEN; OXIDES; SILICON; TEMPERATURE; TUNGSTEN; X-RAY DIFFRACTION;

EID: 34247274164     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600562     Document Type: Article

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