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Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages 522-525

The role of oxygen partial pressure and annealing temperature on the formation of W=O bonds in thin WO3 films

(5) Bittencourt, C a Landers, R a Llobet, E b Correig, X b Calderer, J c

a UNIVERSITY OF CAMPINAS (Brazil)

b UNIVERSITAT ROVIRA I VIRGILI (Spain)

c UNIVERSITAT POLITÈCNICA DE CATALUNYA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; COMPOSITION; DEPOSITION; GRAIN SIZE AND SHAPE; OXYGEN; PARTIAL PRESSURE; RAMAN SPECTROSCOPY; SILICON; TEMPERATURE; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN PARTIAL PRESSURE; PHOTOELECTRONS; REACTIVE RADIOFREQUENCY SPUTTERING; TUNGSTEN TRIOXIDE;

THIN FILMS;

EID: 0036611219 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/6/304 Document Type: Article

Times cited : (58)

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