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Volumn 47, Issue 18, 2012, Pages 6593-6600
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Comparative microscopic and spectroscopic analysis of temperature-dependent growth of WO 3 and W 0.95Ti 0.05O 3 thin films
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Author keywords
[No Author keywords available]
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Indexed keywords
AFM;
DOPED MATERIALS;
DOPED SAMPLE;
EXPERIMENTAL CONDITIONS;
LOWER FREQUENCIES;
MAGNETRON REACTIVE SPUTTERING;
MORPHOLOGY AND COMPOSITION;
OXIDATION STATE;
RADIO FREQUENCIES;
RAMAN MEASUREMENTS;
RAMAN PEAK;
ROOM TEMPERATURE;
SPECTROSCOPIC STUDIES;
STRETCHING MODES;
SUBSTRATE TEMPERATURE;
TEMPERATURE DEPENDENT;
TI DOPING;
XPS DATA;
ATOMIC FORCE MICROSCOPY;
GROWTH TEMPERATURE;
PHOTOELECTRONS;
RAMAN SPECTROSCOPY;
SEMICONDUCTOR DOPING;
SPECTROSCOPIC ANALYSIS;
STOICHIOMETRY;
SURFACE ROUGHNESS;
X RAY PHOTOELECTRON SPECTROSCOPY;
THIN FILMS;
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EID: 84864739534
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-012-6591-z Document Type: Article |
Times cited : (23)
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References (24)
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