Electrochromic properties of N-doped tungsten oxide thin films prepared by reactive DC-pulsed sputtering

Thin Solid Films

Volumn 519, Issue 10, 2011, Pages 3032-3036

  Sun, Xilian ^a   Liu, Zhimin ^a   Cao, Hongtao ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

DC pulsed sputtering; Electrochromism; N doping; Optical properties; Structural properties; Tungsten oxide

Indexed keywords

AGGLOMERATED NANOPARTICLES; AMORPHOUS MATRICES; BAND GAP ENERGY; CHARGE TRANSPORT; COLORATION EFFICIENCIES; ELECTROCHROMIC PROPERTIES; ELECTROCHROMICS; HYBRID STRUCTURE; ION TRANSPORTS; LITHIUM-ION TRANSPORT; MORPHOLOGICAL IMAGES; N CONTENT; N-DOPED; N-DOPING; NANOPARTICLE SIZES; NITROGEN DOPANT; NITROGEN-DOPED; NITROGEN-DOPING; NITROGEN-DOPING EFFECTS; NITROUS OXIDE; OPEN CHANNELS; OPTICAL MODULATION; PULSED MAGNETRON SPUTTERING; PULSED SPUTTERING; TUNGSTEN OXIDE; TUNGSTEN OXIDE THIN FILMS; VOLTAMMETRIC;

AMORPHOUS FILMS; DEPOSITION; ELECTROCHROMIC DEVICES; ELECTROCHROMISM; LITHIUM; NANOPARTICLES; NITROGEN; NITROGEN OXIDES; OXIDE FILMS; STRUCTURAL PROPERTIES; THIN FILMS; TRANSPORT PROPERTIES; TUNGSTEN; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 79952313501     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.017     Document Type: Article

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