Low-temperature characteristics of HfO

IEEE Electron Device Letters

Volumn 36, Issue 6, 2015, Pages 567-569

  Fang, Runchen ^a   Chen, Wenhao ^a   Gao, Ligang ^a   Yu, Weijie ^a   Yu, Shimeng ^a  

^a Arizona State University   (United States)

Author keywords

conduction mechanism; HfO2; hopping; low temperature; ReRAM; resistive switching; RRAM; variation

Indexed keywords

ACTIVATION ENERGY; HAFNIUM OXIDES; NONVOLATILE STORAGE; PLATINUM;

CONDUCTION MECHANISM; HFO2; HOPPING; LOW TEMPERATURES; RERAM; RESISTIVE SWITCHING; RRAM; VARIATION;

RANDOM ACCESS STORAGE;

EID: 84930508154     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2420665     Document Type: Article

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