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Applied Physics Letters

Volumn 105, Issue 6, 2014, Pages

Metallic to hopping conduction transition in Ta2O 5-x/TaOy resistive switching device

(6) Zhang, Ye a Deng, Ning a Wu, Huaqiang a,b Yu, Zhiping a Zhang, Jinyu a Qian, He a,b

a TSINGHUA UNIVERSITY (China)

b TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

TANTALUM OXIDES; TEMPERATURE DISTRIBUTION;

COMPREHENSIVE ANALYSIS; LOW-RESISTANCE STATE; RESISTIVE SWITCHING DEVICES; TEMPERATURE DECREASE; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT MEASUREMENTS; VARIABLE RANGE HOPPING; VERY LOW TEMPERATURES;

METALS;

EID: 84925543913 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4893325 Document Type: Article

Times cited : (96)

References (24)

1
- 79960642086
- 10.1038/nmat3070
- M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, and K. Kim, Nat. Mater. 10, 625 (2011). 10.1038/nmat3070
- (2011) Nat. Mater. , vol.10 , pp. 625
- Lee, M.-J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Chang, M.⁵ Hur, J.H.⁶ Kim, Y.-B.⁷ Kim, C.-J.⁸ Seo, D.H.⁹ Seo, S.¹⁰ Chung, U.-I.¹¹ Yoo, I.-K.¹² Kim, K.¹³

2
- 64549160578
- 10.1109/IEDM.2008.4796676
- Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, IEEE Int. Electron Devices Meet. 2008,1-4. 10.1109/IEDM.2008.4796676.
- IEEE Int. Electron Devices Meet. , vol.2008 , pp. 1-4
- Wei, Z.¹ Kanzawa, Y.² Arita, K.³ Katoh, Y.⁴ Kawai, K.⁵ Muraoka, S.⁶ Mitani, S.⁷ Fujii, S.⁸ Katayama, K.⁹ Iijima, M.¹⁰ Mikawa, T.¹¹ Ninomiya, T.¹² Miyanaga, R.¹³ Kawashima, Y.¹⁴ Tsuji, K.¹⁵ Himeno, A.¹⁶ Okada, T.¹⁷ Azuma, R.¹⁸ Shimakawa, K.¹⁹ Sugaya, H.²⁰ more..

3
- 84898892526
- 10.1002/adfm.201303274
- J. Shang, G. Liu, H. Yang, X. Zhu, X. Chen, H. Tan, B. Hu, L. Pan, W. Xue, and R.-W. Li, Adv. Funct. Mater. 24, 2171 (2014). 10.1002/adfm.201303274
- (2014) Adv. Funct. Mater. , vol.24 , pp. 2171
- Shang, J.¹ Liu, G.² Yang, H.³ Zhu, X.⁴ Chen, X.⁵ Tan, H.⁶ Hu, B.⁷ Pan, L.⁸ Xue, W.⁹ Li, R.-W.¹⁰

4
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

5
- 76649133422
- 10.1038/nnano.2009.456
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

6
- 79956064739
- 10.1088/0957-4484/22/25/254002
- K. M. Kim, D. S. Jeong, and C. S. Hwang, Nanotechnology 22, 254002 (2011). 10.1088/0957-4484/22/25/254002
- (2011) Nanotechnology , vol.22 , pp. 254002
- Kim, K.M.¹ Jeong, D.S.² Hwang, C.S.³

7
- 84884133449
- 10.1038/ncomms3382
- G.-S. Park, Y. B. Kim, S. Y. Park, X. S. Li, S. Heo, M.-J. Lee, M. Chang, J. H. Kwon, M. Kim, U.-I. Chung, R. Dittmann, R. Waser, and K. Kim, Nat. Commun. 4, 2382 (2013). 10.1038/ncomms3382
- (2013) Nat. Commun. , vol.4 , pp. 2382
- Park, G.-S.¹ Kim, Y.B.² Park, S.Y.³ Li, X.S.⁴ Heo, S.⁵ Lee, M.-J.⁶ Chang, M.⁷ Kwon, J.H.⁸ Kim, M.⁹ Chung, U.-I.¹⁰ Dittmann, R.¹¹ Waser, R.¹² Kim, K.¹³

8
- 84857017320
- 10.1109/IEDM.2011.6131650
- Z. Wei, T. Takagi, Y. Kanzawa, Y. Katoh, T. Ninomiya, K. Kawai, S. Muraoka, S. Mitani, K. Katayama, S. Fujii, R. Miyanaga, Y. Kawashima, T. Mikawa, K. Shimakawa, and K. Aono, IEEE Int. Electron Devices Meet. 2011,31.4.1-31.4.4. 10.1109/IEDM.2011.6131650.
- IEEE Int. Electron Devices Meet. , vol.2011 , pp. 314-314
- Wei, Z.¹ Takagi, T.² Kanzawa, Y.³ Katoh, Y.⁴ Ninomiya, T.⁵ Kawai, K.⁶ Muraoka, S.⁷ Mitani, S.⁸ Katayama, K.⁹ Fujii, S.¹⁰ Miyanaga, R.¹¹ Kawashima, Y.¹² Mikawa, T.¹³ Shimakawa, K.¹⁴ Aono, K.¹⁵

9
- 84888870910
- 10.1021/nn4038207
- J. A. Koza, E. W. Bohannan, and J. A. Switzer, ACS Nano 7, 9940 (2013). 10.1021/nn4038207
- (2013) ACS Nano , vol.7 , pp. 9940
- Koza, J.A.¹ Bohannan, E.W.² Switzer, J.A.³

10
- 84891532322
- 10.1109/LED.2013.2288311
- H. Wu, X. Li, M. Wu, F. Huang, Z. Yu, and H. Qian, IEEE Electron Device Lett. 35, 39 (2014). 10.1109/LED.2013.2288311
- (2014) IEEE Electron Device Lett. , vol.35 , pp. 39
- Wu, H.¹ Li, X.² Wu, M.³ Huang, F.⁴ Yu, Z.⁵ Qian, H.⁶

11
- 0003510623
- (Oxford University Press)
- N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Oxford University Press, 2012).
- (2012) Electronic Processes in Non-Crystalline Materials
- Mott, N.F.¹ Davis, E.A.²

12
- 84879847355
- 10.1063/1.4812811
- X. L. Jiang, Y. G. Zhao, Y. S. Chen, D. Li, Y. X. Luo, D. Y. Zhao, Z. Sun, J. R. Sun, and H. W. Zhao, Appl. Phys. Lett. 102, 253507 (2013). 10.1063/1.4812811
- (2013) Appl. Phys. Lett. , vol.102 , pp. 253507
- Jiang, X.L.¹ Zhao, Y.G.² Chen, Y.S.³ Li, D.⁴ Luo, Y.X.⁵ Zhao, D.Y.⁶ Sun, Z.⁷ Sun, J.R.⁸ Zhao, H.W.⁹

13
- 84925616205
- (Pearson Education India)
- S. Sivanagaraju, Generation and Utilization of Electrical Energy (Pearson Education India, 2010).
- (2010) Generation and Utilization of Electrical Energy
- Sivanagaraju, S.¹

14
- 48849114208
- 10.1063/1.2956703
- Q. Huang, C. M. Lilley, M. Bode, and R. Divan, J. Appl. Phys. 104, 023709 (2008). 10.1063/1.2956703
- (2008) J. Appl. Phys. , vol.104 , pp. 023709
- Huang, Q.¹ Lilley, C.M.² Bode, M.³ Divan, R.⁴

15
- 49549171947
- 10.1016/0375-9601(73)90252-1
- A. V. Joglekar, R. N. Karekar, and K. Sathianandan, Phys. Lett. A 45, 391 (1973). 10.1016/0375-9601(73)90252-1
- (1973) Phys. Lett. A , vol.45 , pp. 391
- Joglekar, A.V.¹ Karekar, R.N.² Sathianandan, K.³

16
- 0035469868
- 10.1080/00018730110102187
- E. H. Sondheimer, Adv. Phys. 50, 499 (2001). 10.1080/00018730110102187
- (2001) Adv. Phys. , vol.50 , pp. 499
- Sondheimer, E.H.¹

17
- 84859206837
- 10.1038/ncomms1737
- Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, Nat. Commun. 3, 732 (2012). 10.1038/ncomms1737
- (2012) Nat. Commun. , vol.3 , pp. 732
- Yang, Y.¹ Gao, P.² Gaba, S.³ Chang, T.⁴ Pan, X.⁵ Lu, W.⁶

18
- 84876156021
- 10.1109/IEDM.2012.6479107
- S. Lin, L. Zhao, J. Zhang, H. Wu, Y. Wang, H. Qian, and Z. Yu, IEEE Int. Electron Devices Meet. 2012,26.3.1-26.3.4. 10.1109/IEDM.2012.6479107.
- IEEE Int. Electron Devices Meet. , vol.2012 , pp. 2631-2634
- Lin, S.¹ Zhao, L.² Zhang, J.³ Wu, H.⁴ Wang, Y.⁵ Qian, H.⁶ Yu, Z.⁷

19
- 84890245905
- 10.1039/c3nr05016e
- S. Choi, Y. Yang, and W. Lu, Nanoscale 6, 400 (2014). 10.1039/c3nr05016e
- (2014) Nanoscale , vol.6 , pp. 400
- Choi, S.¹ Yang, Y.² Lu, W.³

20
- 33746298191
- Temperature dependence of the resistance of metallic nanowires of diameter ≥15 nm: Applicability of Bloch-Grüneisen theorem
- DOI 10.1103/PhysRevB.74.035426
- A. Bid, A. Bora, and A. K. Raychaudhuri, Phys. Rev. B 74, 035426 (2006). 10.1103/PhysRevB.74.035426 (Pubitemid 44107250)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.74 , Issue.3 , pp. 035426
- Bid, A.¹ Bora, A.² Raychaudhuri, A.K.³

21
- 67649246880
- 10.1016/j.jallcom.2009.03.082
- R. Shabna, P. M. Sarun, S. Vinu, and U. Syamaprasad, J. Alloys Compd. 481, 797 (2009). 10.1016/j.jallcom.2009.03.082
- (2009) J. Alloys Compd. , vol.481 , pp. 797
- Shabna, R.¹ Sarun, P.M.² Vinu, S.³ Syamaprasad, U.⁴

22
- 79951951303
- 10.1109/LED.2010.2099205
- X. A. Tran, H. Y. Yu, Y.-C. Yeo, L. Wu, W. J. Liu, Z. R. Wang, Z. Fang, K.-L. Pey, X. W. Sun, A. Y. Du, B.-Y. Nguyen, and M.-F. Li, IEEE Electron Device Lett. 32, 396 (2011). 10.1109/LED.2010.2099205
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 396
- Tran, X.A.¹ Yu, H.Y.² Yeo, Y.-C.³ Wu, L.⁴ Liu, W.J.⁵ Wang, Z.R.⁶ Fang, Z.⁷ Pey, K.-L.⁸ Sun, X.W.⁹ Du, A.Y.¹⁰ Nguyen, B.-Y.¹¹ Li, M.-F.¹²

23
- 84867081673
- 10.1063/1.4754011
- W. Zhu, T. P. Chen, Y. Liu, and S. Fung, J. Appl. Phys. 112, 063706 (2012). 10.1063/1.4754011
- (2012) J. Appl. Phys. , vol.112 , pp. 063706
- Zhu, W.¹ Chen, T.P.² Liu, Y.³ Fung, S.⁴

24
- 84879100713
- 10.1063/1.4810000
- Y. Zhang, H. Wu, Y. Bai, A. Chen, Z. Yu, J. Zhang, and H. Qian, Appl. Phys. Lett. 102, 233502 (2013). 10.1063/1.4810000
- (2013) Appl. Phys. Lett. , vol.102 , pp. 233502
- Zhang, Y.¹ Wu, H.² Bai, Y.³ Chen, A.⁴ Yu, Z.⁵ Zhang, J.⁶ Qian, H.⁷

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