Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Volumn , Issue , 2014, Pages

  Ahn, Chiyui ^a   Kim, Seyoung ^b   Gokmen, Tayfun ^b   Dial, Oliver ^b   Ritter, Mark ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION PROGRAMS; ELECTRIC FIELDS;

CONDUCTION MECHANISM; ELECTRICAL CONDUCTION; HIGH ELECTRIC FIELDS; MEASURED TEMPERATURES; POOLE-FRENKEL CONDUCTION; TEMPERATURE DEPENDENT; TEMPERATURE-INSENSITIVE; TRAP ASSISTED TUNNELING;

ELECTRIC PROPERTIES;

EID: 84904198521     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2014.6839685     Document Type: Conference Paper

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