Temperature impact on the reset operation in HfO2 RRAM

IEEE Electron Device Letters

Volumn 36, Issue 3, 2015, Pages 244-246

  Puglisi, Francesco Maria ^a   Qafa, Altin ^a   Pavan, Paolo ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

I V; reset; resistive switching; RRAM; temperature; variability

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; HAFNIUM OXIDES; TEMPERATURE; TEMPERATURE DISTRIBUTION;

EFFECTIVE ACTIVATION ENERGY; REAL OPERATING CONDITIONS; RESET; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; RRAM; TEMPERATURE DEPENDENCE; VARIABILITY;

RANDOM ACCESS STORAGE;

EID: 84923651990     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2397192     Document Type: Article

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