Thermoelectric seebeck effect in oxide-based resistive switching memory

Nature Communications

Volumn 5, Issue , 2014, Pages

  Wang, Ming ^a   Bi, Chong ^a   Li, Ling ^a   Long, Shibing ^a   Liu, Qi ^a   Lv, Hangbing ^a   Lu, Nianduan ^a   Sun, Pengxiao ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METAL; OXIDE; OXYGEN; SILICON DIOXIDE;

ELECTRIC FIELD; ELECTRON; MEMORY; OXIDE;

ARTICLE; ELECTRIC FIELD; ELECTRIC RESISTANCE; ELECTRON TRANSPORT; ELECTRONICS; INFORMATION PROCESSING; INFORMATION STORAGE; OXIDE BASED RESISTIVE SWITCHING MEMORY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 84907345481     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms5598     Document Type: Article

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