메뉴 건너뛰기




Volumn 36, Issue 6, 2015, Pages 621-623

A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

Author keywords

Amplifier; Black Phosphorus; Field Effect Transistor; Frequency Response; Gain

Indexed keywords

AMPLIFIERS (ELECTRONIC); FREQUENCY RESPONSE; IONIC LIQUIDS; PHOSPHORUS;

EID: 84930507287     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2421948     Document Type: Article
Times cited : (14)

References (17)
  • 1
    • 79952406873 scopus 로고    scopus 로고
    • Single-layer MoS2 transistors
    • Jan.
    • B. Radisavljevic et al., "Single-layer MoS2 transistors," Nature Nanotechnol., vol. 6, no. 3, pp. 147-150, Jan. 2011.
    • (2011) Nature Nanotechnol. , vol.6 , Issue.3 , pp. 147-150
    • Radisavljevic, B.1
  • 2
    • 84903467571 scopus 로고    scopus 로고
    • Field-effect transistors based on few-layered α-MoTe2
    • Jun.
    • N. R. Pradhan et al., "Field-effect transistors based on few-layered α-MoTe2," ACS Nano, vol. 8, no. 6, pp. 5911-5920, Jun. 2014.
    • (2014) ACS Nano , vol.8 , Issue.6 , pp. 5911-5920
    • Pradhan, N.R.1
  • 3
    • 84870569116 scopus 로고    scopus 로고
    • Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
    • S. Larentis, B. Fallahazad, and E. Tutuc, "Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers," Appl. Phys. Lett., vol. 101, no. 22, pp. 223104-1-223104-4, 2012.
    • (2012) Appl. Phys. Lett. , vol.101 , Issue.22 , pp. 2231041-2231044
    • Larentis, S.1    Fallahazad, B.2    Tutuc, E.3
  • 4
    • 80052090759 scopus 로고    scopus 로고
    • Performance limits of monolayer transition metal dichalcogenide transistors
    • Sep.
    • L. Liu et al., "Performance limits of monolayer transition metal dichalcogenide transistors," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3042-3047, Sep. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.9 , pp. 3042-3047
    • Liu, L.1
  • 5
    • 2542481867 scopus 로고    scopus 로고
    • High-mobility field-effect transistors based on transition metal dichalcogenides
    • V. Podzorov et al., "High-mobility field-effect transistors based on transition metal dichalcogenides," Appl. Phys. Lett., vol. 84, no. 17, pp. 3301-3303, 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.17 , pp. 3301-3303
    • Podzorov, V.1
  • 6
    • 84863672242 scopus 로고    scopus 로고
    • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
    • W. S. Hwang et al., "Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior," Appl. Phys. Lett., vol. 101, no. 1, pp. 013107-1-013107-4, 2012.
    • (2012) Appl. Phys. Lett. , vol.101 , Issue.1 , pp. 0131071-0131074
    • Hwang, W.S.1
  • 7
    • 84872115141 scopus 로고    scopus 로고
    • High performance multilayer MoS2 transistors with scandium contacts
    • Jan.
    • S. Das et al., "High performance multilayer MoS2 transistors with scandium contacts," Nano Lett., vol. 13, no. 1, pp. 100-105, Jan. 2013.
    • (2013) Nano Lett. , vol.13 , Issue.1 , pp. 100-105
    • Das, S.1
  • 8
    • 84880179070 scopus 로고    scopus 로고
    • Where does the current flow in two-dimensional layered systems?
    • Jul.
    • S. Das and J. Appenzeller, "Where does the current flow in two-dimensional layered systems?" Nano Lett., vol. 13, no. 7, pp. 3396-3402, Jul. 2013.
    • (2013) Nano Lett. , vol.13 , Issue.7 , pp. 3396-3402
    • Das, S.1    Appenzeller, J.2
  • 9
    • 84876423277 scopus 로고    scopus 로고
    • Screening and interlayer coupling in multilayer MoS2
    • Apr.
    • S. Das and J. Appenzeller, "Screening and interlayer coupling in multilayer MoS2," Phys. Status. Solidi RRL, vol. 7, no. 4, pp. 268-272, Apr. 2013.
    • (2013) Phys. Status. Solidi RRL , vol.7 , Issue.4 , pp. 268-272
    • Das, S.1    Appenzeller, J.2
  • 10
    • 84884273239 scopus 로고    scopus 로고
    • WSe2 field effect transistors with enhanced ambipolar characteristics
    • S. Das and J. Appenzeller, "WSe2 field effect transistors with enhanced ambipolar characteristics," Appl. Phys. Lett., vol. 103, no. 10, pp. 103501-1-103501-5, 2013.
    • (2013) Appl. Phys. Lett. , vol.103 , Issue.10 , pp. 1035011-1035015
    • Das, S.1    Appenzeller, J.2
  • 11
    • 84907337471 scopus 로고    scopus 로고
    • High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
    • S. Das, M. Dubey, and A. Roelofs, "High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors," Appl. Phys. Lett., vol. 105, no. 8, pp. 083511-1-083511-5, 2014.
    • (2014) Appl. Phys. Lett. , vol.105 , Issue.8 , pp. 0835111-0835115
    • Das, S.1    Dubey, M.2    Roelofs, A.3
  • 12
    • 84900508929 scopus 로고    scopus 로고
    • All two-dimensional, flexible, transparent, and thinnest thin film transistor
    • S. Das et al., "All two-dimensional, flexible, transparent, and thinnest thin film transistor," Nano Lett., vol. 14, no. 5, pp. 2861-2866, 2014.
    • (2014) Nano Lett. , vol.14 , Issue.5 , pp. 2861-2866
    • Das, S.1
  • 13
    • 84901193930 scopus 로고    scopus 로고
    • Black phosphorus field-effect transistors
    • Mar.
    • L. Li et al., "Black phosphorus field-effect transistors," Nature Nanotechnol., vol. 9, no. 3, pp. 372-377, Mar. 2012.
    • (2012) Nature Nanotechnol. , vol.9 , Issue.3 , pp. 372-377
    • Li, L.1
  • 14
    • 84904707277 scopus 로고    scopus 로고
    • Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
    • Jul.
    • F. Xia, H. Wang, and Y. Jia, "Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics," Nature Commun., vol. 5, Jul. 2014, Art. ID 4458.
    • (2014) Nature Commun. , vol.5
    • Xia, F.1    Wang, H.2    Jia, Y.3
  • 15
    • 84907876410 scopus 로고    scopus 로고
    • Tunable transport gap in phosphorene
    • S. Das et al., "Tunable transport gap in phosphorene," Nano Lett., vol. 14, no. 10, pp. 5733-5739, 2014.
    • (2014) Nano Lett. , vol.14 , Issue.10 , pp. 5733-5739
    • Das, S.1
  • 16
    • 84912574921 scopus 로고    scopus 로고
    • Ambipolar phosphorene field effect transistor
    • S. Das, M. Demarteau, and A. Roelofs, "Ambipolar phosphorene field effect transistor," ACS Nano, vol. 8, no. 11, pp. 11730-11738, 2014.
    • (2014) ACS Nano , vol.8 , Issue.11 , pp. 11730-11738
    • Das, S.1    Demarteau, M.2    Roelofs, A.3
  • 17
    • 84878321486 scopus 로고    scopus 로고
    • Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating
    • M. M. Perera et al., "Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating," ACS Nano, vol. 7, no. 5, pp. 4449-4458, 2013.
    • (2013) ACS Nano , vol.7 , Issue.5 , pp. 4449-4458
    • Perera, M.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.