-
1
-
-
79952406873
-
Single-layer MoS2 transistors
-
Jan.
-
B. Radisavljevic et al., "Single-layer MoS2 transistors," Nature Nanotechnol., vol. 6, no. 3, pp. 147-150, Jan. 2011.
-
(2011)
Nature Nanotechnol.
, vol.6
, Issue.3
, pp. 147-150
-
-
Radisavljevic, B.1
-
2
-
-
84903467571
-
Field-effect transistors based on few-layered α-MoTe2
-
Jun.
-
N. R. Pradhan et al., "Field-effect transistors based on few-layered α-MoTe2," ACS Nano, vol. 8, no. 6, pp. 5911-5920, Jun. 2014.
-
(2014)
ACS Nano
, vol.8
, Issue.6
, pp. 5911-5920
-
-
Pradhan, N.R.1
-
3
-
-
84870569116
-
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
-
S. Larentis, B. Fallahazad, and E. Tutuc, "Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers," Appl. Phys. Lett., vol. 101, no. 22, pp. 223104-1-223104-4, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.101
, Issue.22
, pp. 2231041-2231044
-
-
Larentis, S.1
Fallahazad, B.2
Tutuc, E.3
-
4
-
-
80052090759
-
Performance limits of monolayer transition metal dichalcogenide transistors
-
Sep.
-
L. Liu et al., "Performance limits of monolayer transition metal dichalcogenide transistors," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3042-3047, Sep. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.9
, pp. 3042-3047
-
-
Liu, L.1
-
5
-
-
2542481867
-
High-mobility field-effect transistors based on transition metal dichalcogenides
-
V. Podzorov et al., "High-mobility field-effect transistors based on transition metal dichalcogenides," Appl. Phys. Lett., vol. 84, no. 17, pp. 3301-3303, 2004.
-
(2004)
Appl. Phys. Lett.
, vol.84
, Issue.17
, pp. 3301-3303
-
-
Podzorov, V.1
-
6
-
-
84863672242
-
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
-
W. S. Hwang et al., "Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior," Appl. Phys. Lett., vol. 101, no. 1, pp. 013107-1-013107-4, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.101
, Issue.1
, pp. 0131071-0131074
-
-
Hwang, W.S.1
-
7
-
-
84872115141
-
High performance multilayer MoS2 transistors with scandium contacts
-
Jan.
-
S. Das et al., "High performance multilayer MoS2 transistors with scandium contacts," Nano Lett., vol. 13, no. 1, pp. 100-105, Jan. 2013.
-
(2013)
Nano Lett.
, vol.13
, Issue.1
, pp. 100-105
-
-
Das, S.1
-
8
-
-
84880179070
-
Where does the current flow in two-dimensional layered systems?
-
Jul.
-
S. Das and J. Appenzeller, "Where does the current flow in two-dimensional layered systems?" Nano Lett., vol. 13, no. 7, pp. 3396-3402, Jul. 2013.
-
(2013)
Nano Lett.
, vol.13
, Issue.7
, pp. 3396-3402
-
-
Das, S.1
Appenzeller, J.2
-
9
-
-
84876423277
-
Screening and interlayer coupling in multilayer MoS2
-
Apr.
-
S. Das and J. Appenzeller, "Screening and interlayer coupling in multilayer MoS2," Phys. Status. Solidi RRL, vol. 7, no. 4, pp. 268-272, Apr. 2013.
-
(2013)
Phys. Status. Solidi RRL
, vol.7
, Issue.4
, pp. 268-272
-
-
Das, S.1
Appenzeller, J.2
-
10
-
-
84884273239
-
WSe2 field effect transistors with enhanced ambipolar characteristics
-
S. Das and J. Appenzeller, "WSe2 field effect transistors with enhanced ambipolar characteristics," Appl. Phys. Lett., vol. 103, no. 10, pp. 103501-1-103501-5, 2013.
-
(2013)
Appl. Phys. Lett.
, vol.103
, Issue.10
, pp. 1035011-1035015
-
-
Das, S.1
Appenzeller, J.2
-
11
-
-
84907337471
-
High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
-
S. Das, M. Dubey, and A. Roelofs, "High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors," Appl. Phys. Lett., vol. 105, no. 8, pp. 083511-1-083511-5, 2014.
-
(2014)
Appl. Phys. Lett.
, vol.105
, Issue.8
, pp. 0835111-0835115
-
-
Das, S.1
Dubey, M.2
Roelofs, A.3
-
12
-
-
84900508929
-
All two-dimensional, flexible, transparent, and thinnest thin film transistor
-
S. Das et al., "All two-dimensional, flexible, transparent, and thinnest thin film transistor," Nano Lett., vol. 14, no. 5, pp. 2861-2866, 2014.
-
(2014)
Nano Lett.
, vol.14
, Issue.5
, pp. 2861-2866
-
-
Das, S.1
-
13
-
-
84901193930
-
Black phosphorus field-effect transistors
-
Mar.
-
L. Li et al., "Black phosphorus field-effect transistors," Nature Nanotechnol., vol. 9, no. 3, pp. 372-377, Mar. 2012.
-
(2012)
Nature Nanotechnol.
, vol.9
, Issue.3
, pp. 372-377
-
-
Li, L.1
-
14
-
-
84904707277
-
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
-
Jul.
-
F. Xia, H. Wang, and Y. Jia, "Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics," Nature Commun., vol. 5, Jul. 2014, Art. ID 4458.
-
(2014)
Nature Commun.
, vol.5
-
-
Xia, F.1
Wang, H.2
Jia, Y.3
-
15
-
-
84907876410
-
Tunable transport gap in phosphorene
-
S. Das et al., "Tunable transport gap in phosphorene," Nano Lett., vol. 14, no. 10, pp. 5733-5739, 2014.
-
(2014)
Nano Lett.
, vol.14
, Issue.10
, pp. 5733-5739
-
-
Das, S.1
-
16
-
-
84912574921
-
Ambipolar phosphorene field effect transistor
-
S. Das, M. Demarteau, and A. Roelofs, "Ambipolar phosphorene field effect transistor," ACS Nano, vol. 8, no. 11, pp. 11730-11738, 2014.
-
(2014)
ACS Nano
, vol.8
, Issue.11
, pp. 11730-11738
-
-
Das, S.1
Demarteau, M.2
Roelofs, A.3
-
17
-
-
84878321486
-
Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating
-
M. M. Perera et al., "Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating," ACS Nano, vol. 7, no. 5, pp. 4449-4458, 2013.
-
(2013)
ACS Nano
, vol.7
, Issue.5
, pp. 4449-4458
-
-
Perera, M.M.1
|