Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application

Chemistry of Materials

Volumn 27, Issue 10, 2015, Pages 3707-3713

  Eom, Taeyong ^a   Gwon, Taehong ^a   Yoo, Sijung ^a   Choi, Byung Joon ^b   Kim, Moo Sung ^c   Buchanan, Iain ^d   Ivanov, Sergei ^d   Xiao, Manchao ^d   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b Seoul National University of Science and Technology   (South Korea)

^c Air Products Korea   (South Korea)

^d AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; FILM GROWTH; GERMANIUM COMPOUNDS; LIGANDS; PHASE CHANGE MEMORY; SILICON COMPOUNDS; SUBSTITUTION REACTIONS;

A-STABLE; CONTACT HOLES; GE-SB-TE; GE2SB2TE5; GE2SB2TE5 FILMS; IN COMPOSITIONS; LIGAND EXCHANGES; SUBSTRATE TEMPERATURE;

ANTIMONY COMPOUNDS;

EID: 84930225371     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.5b00805     Document Type: Article

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