Combined atomic layer and chemical vapor deposition, and selective growth of Ge2Sb2Te5 films on TiN/W contact plag

Chemistry of Materials

Volumn 19, Issue 18, 2007, Pages 4387-4389

  Choi, Byung Joon ^a   Choi, Seol ^a   Shin, Yong Cheol ^a   Kim, Kyung Min ^a   Hwang, Cheol Seong ^a   Kim, Yoon Jung ^b   Son, Young Jin ^b   Hong, Suk Kyoung ^b  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; DESORPTION; FILM GROWTH; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICA; STOICHIOMETRY; TITANIUM NITRIDE;

CONTACT STRUCTURE; FILM COMPOSITION; INJECTION TIME; LAYER DENSITIES;

THIN FILMS;

EID: 34548820185     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm071313x     Document Type: Article

References (10)

1. Hudgens, S.; Johnson, B. Mater. Res. Soc. Bull. 2004, 29, 829.
2. Lay, S. Tech. Dig.-Int. Electron Devices Meet. 2003, 255.
3. Lee, S. Y.; Kim, K. Digest of Technical Papers; International Conference on Integrated Circuit Design and Technology, Austin, Texas, May 17-20, 2004; Institute of Electrical and Electronic Engineers: New York, 2004; p 45.
4. Hwang, Y. N.; et al. Tech. Dig.-Int. Electron Devices Meet. 2003, 893.
5. Oh, J. H.; et al. Tech. Dig-Int. Electron Devices Meet. 2006, 2.6.
6. Ahn, S. J.; et al. Tech. Dig.-Int. Electron Devices Meet. 2004, 907.
7. Cho, S. L.; et al. Symposium on VLSI Technology, Kyoto, Japan, June 14-16, 2005; Institute of Electrical and Electronic Engineers: New York, 2004; Vol. 6B-1, p 96.
8. Kim, Y. -T.; et al. Extended Abstracts from the International Conference on Solid State Devices and Materials, Tokyo, Sept 1517, 2004; Japan Society of Applied Physics: Tokyo, 2004; p 244.
9. Yeung, F. et. al. Extended Abstracts from the International Conference on Solid State Devices and Materials; Japan Society of Applied Physics: Tokyo, 2004; p 246.
10. Choi, B. J.; Choi, S.; Shin, Y. C.; Hwang, C. S.; Lee, J. W.; Jeong, J.; Kim, Y. J.; Hwang, S. Y.; Hong, S. K. J. Electrochem. Soc. 2007, 154 (4), H318.