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Volumn 3, Issue 6, 2015, Pages 1365-1370

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GERMANIUM; SILICON; THIN FILMS;

EID: 84922453784     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c4tc02688h     Document Type: Article
Times cited : (14)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.