Atomic layer deposition and characterization of GeTe thin films

Journal of the Electrochemical Society

Volumn 158, Issue 12, 2011, Pages

  Sarnet, Tiina ^a   Pore, Viljami ^a   Hatanp, Timo ^a   Ritala, Mikko ^a   Leskel, Markku ^a   Schrott, Alejandro ^b   Zhu, Yu ^b   Raoux, Simone ^b   Cheng, Huai Yu ^c  

^a UNIVERSITY OF HELSINKI   (Finland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMALITY; CRYSTALLIZATION PROPERTIES; FILM COMPOSITION; GROWTH PROPERTIES; IMPURITY CONTENT; ORDERS OF MAGNITUDE; SPUTTERED FILMS;

ATOMIC LAYER DEPOSITION; DEPOSITION; THIN FILMS; VAPOR DEPOSITION;

FILM GROWTH;

EID: 81355136255     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.045112jes     Document Type: Article

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