Conformal formation of (GeTe 2) (1- x)(Sb 2Te 3) x layers by atomic layer deposition for nanoscale phase change memories

Chemistry of Materials

Volumn 24, Issue 11, 2012, Pages 2099-2110

  Eom, Taeyong ^a   Choi, Seol ^a   Choi, Byung Joon ^a   Lee, Min Hwan ^b   Gwon, Taehong ^a   Rha, Sang Ho ^a   Lee, Woongkyu ^a   Kim, Moo Sung ^c   Xiao, Manchao ^d   Buchanan, Iain ^d   Cho, Deok Yong ^e   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b Merced   (United States)

^c Air Products Korea   (South Korea)

^d AIR PRODUCTS AND CHEMICALS INC   (United States)

^e RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

atomic layer deposition; GeSbTe pseudobinary solid solution; phase change random access memory; reaction mechanism

Indexed keywords

BINARY COMPOUNDS; CHALCOGENIDE MATERIALS; CHEMICAL ENVIRONMENT; COMPLEX MATERIALS; CONTACT HOLES; GE-SB-TE; HIGH DENSITY; INCORPORATION BEHAVIORS; LOW TEMPERATURES; METAL ORGANIC PRECURSORS; NANO SCALE; NON-VOLATILE MEMORIES; PHASE CHANGE; PHASE CHANGE RANDOM ACCESS MEMORY; PREFERRED GROWTH; PROCESS VARIATION; PSEUDO-BINARIES; REACTION MECHANISM; RESISTANCE SWITCHING; SUBSTRATE TEMPERATURE; THERMAL ALD; THIN FILM GROWTH TECHNIQUES; TIE LINE; ULTRAHIGH DENSITY;

ATOMIC LAYER DEPOSITION; CHEMISORPTION; FILM GROWTH; GERMANIUM; MATERIALS; NANOTECHNOLOGY; PHASE CHANGE MEMORY; PHYSISORPTION; SOLID SOLUTIONS; SUBSTRATES; TERNARY SYSTEMS;

ANTIMONY;

EID: 84862235099     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm300539a     Document Type: Article

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