Programming characteristics of phase change random access memory using phase change simulations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2701-2705

  Kim, Young Tae ^a   Hwang, Young Nam ^a   Lee, Keun Ho ^a   Lee, Se Ho ^a   Jeong, Chang Wook ^a   Ahn, Su Jin ^a   Yeung, Fai ^a   Koh, Gwan Hyeob ^a   Jeong, Heong Sik ^a   Chung, Won Young ^a   Kim, Tai Kyung ^a   Park, Young Kwan ^a   Kim, Ki Nam ^a   Kong, Jeong Taek ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CFD ACE+; Chalcogenide; Confined Structure; ICM; Phase cnange simulation; PRAM

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; PHASE TRANSITIONS; THERMOANALYSIS; THRESHOLD VOLTAGE;

CFD-ACE+; CHALCOGENIDES; CONFINED STRUCTURES; ICM; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); PHASE CHANGE SIMULATION;

RANDOM ACCESS STORAGE;

EID: 21244498532     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2701     Document Type: Conference Paper

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