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Volumn 5, Issue , 2015, Pages

Characterization and modeling of nonfilamentary Ta/TaOx/TiO2/Ti analog synaptic device

Author keywords

[No Author keywords available]

Indexed keywords

TANTALUM; TITANIUM; TITANIUM DIOXIDE;

EID: 84929208091     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep10150     Document Type: Article
Times cited : (174)

References (32)
  • 1
    • 0025507283 scopus 로고
    • Neuromorphic electronic systems
    • Mead, C. Neuromorphic electronic systems. Proc. IEEE 78, 1629-1636 (1990
    • (1990) Proc. IEEE , vol.78 , pp. 1629-1636
    • Mead, C.1
  • 2
    • 84883517906 scopus 로고    scopus 로고
    • Synaptic electronics: Materials, devices and applications
    • Kuzum, D., Yu, S. & Wong, H.-S. P. Synaptic electronics: materials, devices and applications. Nanotechnology 24, 382001 (2013
    • (2013) Nanotechnology , vol.24 , pp. 382001
    • Kuzum, D.1    Yu, S.2    Wong, H.-S.P.3
  • 3
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • Chua, L. & Kang, S. Memristive devices and systems. Proc. IEEE 64, 209-223 (1976
    • (1976) Proc. IEEE , vol.64 , pp. 209-223
    • Chua, L.1    Kang, S.2
  • 5
    • 70249086574 scopus 로고    scopus 로고
    • An electrically modifiable synapse array of resistive switching memory
    • Choi, H., et al. An electrically modifiable synapse array of resistive switching memory. Nanotechnology 20, 345201 (2009
    • (2009) Nanotechnology , vol.20 , pp. 345201
    • Choi, H.1
  • 6
    • 79960834019 scopus 로고    scopus 로고
    • An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
    • Yu, S., Wu, Y., Jeyasingh, R., Kuzum, D. & Wong, H. P. An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation. IEEE Trans. Electron Devices 58, 2729-2737 (2011
    • (2011) IEEE Trans. Electron Devices , vol.58 , pp. 2729-2737
    • Yu, S.1    Wu, Y.2    Jeyasingh, R.3    Kuzum, D.4    Wong, H.P.5
  • 7
    • 84883491609 scopus 로고    scopus 로고
    • Cbram devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (cochlea) and visual (retina) cognitive processing applications
    • Suri, M., et al. CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications. IEDM Tech. Dig. 235-238 (2012
    • (2012) IEDM Tech. Dig , pp. 235-238
    • Suri, M.1
  • 8
    • 84879972340 scopus 로고    scopus 로고
    • Neuromorphic visual system using rram synaptic devices with sub-pj energy and tolerance to variability: Experimental characterization and large-scale modeling
    • Yu, S., et al. Neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling. IEDM Tech. Dig. 239-242 (2012
    • (2012) IEDM Tech. Dig , pp. 239-242
    • Yu, S.1
  • 9
    • 84904757475 scopus 로고    scopus 로고
    • Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-Accuracy neuromorphic computation system
    • Gao, B., et al. Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-Accuracy neuromorphic computation system. ACS Nano 8, 6998-7004 (2014
    • (2014) ACS Nano , vol.8 , pp. 6998-7004
    • Gao, B.1
  • 10
    • 79959342648 scopus 로고    scopus 로고
    • Synaptic behaviors and modeling of a metal oxide memristive device
    • Chang, T., et al. Synaptic behaviors and modeling of a metal oxide memristive device. Appl. Phys. A 102, 857-863 (2011
    • (2011) Appl. Phys , vol.A102 , pp. 857-863
    • Chang, T.1
  • 11
    • 77951026760 scopus 로고    scopus 로고
    • Nanoscale memristor device as synapse in neuromorphic systems
    • Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P. & Lu, W. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10, 1297-301 (2011
    • (2011) Nano Lett , vol.10 , pp. 1297-1301
    • Jo, S.H.1    Chang, T.2    Ebong, I.3    Bhadviya, B.B.4    Mazumder, P.5    Lu, W.6
  • 12
    • 84879896910 scopus 로고    scopus 로고
    • Rram-based synapse for neuromorphic system with pattern recognition function
    • Park, S., et al. RRAM-based synapse for neuromorphic system with pattern recognition function. IEDM Tech. Dig. 231-234 (2012
    • (2012) IEDM Tech. Dig , pp. 231-234
    • Park, S.1
  • 13
    • 84929173666 scopus 로고    scopus 로고
    • Neuromorphic speech systems using advanced reram-based synapse
    • Park, S., et al. Neuromorphic speech systems using advanced ReRAM-based synapse. IEDM Tech. Dig. 625-628 (2013
    • (2013) IEDM Tech. Dig , pp. 625-628
    • Park, S.1
  • 14
    • 79956129424 scopus 로고    scopus 로고
    • Analog memory and spike-Timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
    • Seo, K, et al. Analog memory and spike-Timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology 22, 254023 (2011
    • (2011) Nanotechnology , vol.22 , pp. 254023
    • Seo, K.1
  • 15
    • 84859214431 scopus 로고    scopus 로고
    • 10.10 nm2 hf/hfox crossbar resistive ram with excellent performance, reliability and low-energy operation
    • Govoreanu, B., et al. 10.10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. IEDM Tech. Dig. 729-732 (2011
    • (2011) IEDM Tech. Dig , pp. 729-732
    • Govoreanu, B.1
  • 16
    • 84861089198 scopus 로고    scopus 로고
    • Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
    • Kuzum, D., Jeyasingh, R. G. D., Lee, B. & Wong, H.-S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 12, 2179-2186 (2011
    • (2011) Nano Lett , vol.12 , pp. 2179-2186
    • Kuzum, D.1    Jeyasingh, R.G.D.2    Lee, B.3    Wong, H.-S.P.4
  • 17
    • 84866407616 scopus 로고    scopus 로고
    • Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction
    • Suri, M., et al. Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction. IEDM Tech. Dig. 79-82 (2011
    • (2011) IEDM Tech. Dig , pp. 79-82
    • Suri, M.1
  • 18
    • 0027239369 scopus 로고
    • Proposal of adaptive-learning neuron circuits with ferroelectric analog-memory weights
    • Ishiwara, H. Proposal of adaptive-learning neuron circuits with ferroelectric analog-memory weights. Japan. J. Appl. Phys. 32, 442-446 (1993
    • (1993) Japan. J. Appl. Phys , vol.32 , pp. 442-446
    • Ishiwara, H.1
  • 20
    • 67650102619 scopus 로고    scopus 로고
    • Redox-based resistive switching memories -nanoionic mechanisms, prospects, and challenges
    • Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories -Nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663 (2009
    • (2009) Adv. Mater , vol.21 , pp. 2632-2663
    • Waser, R.1    Dittmann, R.2    Staikov, G.3    Szot, K.4
  • 21
    • 84883442060 scopus 로고    scopus 로고
    • Understanding of the intrinsic characteristics and memory trade-offs of sub-μa filamentary rram operation
    • Goux, L., et al. Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation. Tech. Dig. VLSI Symp. Technol. 162-163 (2013
    • (2013) Tech. Dig. VLSI Symp. Technol , pp. 162-163
    • Goux, L.1
  • 22
    • 84883399801 scopus 로고    scopus 로고
    • Self-rectifying bipolar taox/tio2 rram with superior endurance over 1012 cycles for 3d high-density storageclass memory
    • Hsu, C.-W., et al. Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storageclass memory. Tech. Dig. VLSI Symp. Technol. 166-167 (2013
    • (2013) Tech. Dig. VLSI Symp. Technol , pp. 166-167
    • Hsu, C.-W.1
  • 23
    • 84897470308 scopus 로고    scopus 로고
    • Homogeneous barrier modulation of taox/tio2 bilayer for ultra-high endurance three-dimensional storageclass memory
    • Hsu, C.-W., et al. Homogeneous barrier modulation of TaOx/TiO2 bilayer for ultra-high endurance three-dimensional storageclass memory. Nanotechnology 25, 165202 (2014
    • (2014) Nanotechnology , vol.25 , pp. 165202
    • Hsu, C.-W.1
  • 25
    • 78649444385 scopus 로고    scopus 로고
    • A phenomenological model for the reset mechanism of metal oxide rram
    • Yu, S. & Wong, H.-S. P. A phenomenological model for the reset mechanism of metal oxide RRAM. IEEE Electron Dev. Lett. 31, 1455-1457 (2010
    • (2010) IEEE Electron Dev. Lett , vol.31 , pp. 1455-1457
    • Yu, S.1    Wong, H.-S.P.2
  • 26
    • 84877790976 scopus 로고    scopus 로고
    • Physical electro-Thermal model of resistive switching in bi-layered resistance-change memory
    • Kim, S., et al. Physical electro-Thermal model of resistive switching in bi-layered resistance-change memory. Sci. Rep. 3, 1680 (2013
    • (2013) Sci. Rep , vol.3 , pp. 1680
    • Kim, S.1
  • 29
    • 82555171565 scopus 로고    scopus 로고
    • Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches
    • Menzel, S., Waters, M., Marchewka, A., Bottger, U., Dittmann, R. & Waser, R. Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches. Adv. Funct. Mater. 21, 4487-4492 (2011
    • (2011) Adv. Funct. Mater , vol.21 , pp. 4487-4492
    • Menzel, S.1    Waters, M.2    Marchewka, A.3    Bottger, U.4    Dittmann, R.5    Waser, R.6
  • 30
    • 84860660887 scopus 로고    scopus 로고
    • On spike-Timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex
    • Zamarreno-Ramos, C., et al. On spike-Timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex. Front. Neurosci. 5, 26 (2011
    • (2011) Front. Neurosci , vol.5 , pp. 26
    • Zamarreno-Ramos, C.1
  • 32
    • 0036201201 scopus 로고    scopus 로고
    • Short-Term synaptic plasticity
    • Zucker, R. S. & Regehr, W. G. Short-Term synaptic plasticity. Annu. Rev. Physiol. 64, 355-405 (2002
    • (2002) Annu. Rev. Physiol , vol.64 , pp. 355-405
    • Zucker, R.S.1    Regehr, W.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.