Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Goux, L ^a   Fantini, A ^a   Degraeve, R ^a   Raghavan, N ^a,b   Nigon, R ^a   Strangio, S ^a   Kar, G ^a   Wouters, D J ^a,b   Chen, Y Y ^a,b   Komura, M ^c   De Stefano, F ^b   Afanas'Ev, V V ^b   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILAMENT TEMPERATURE; INTRINSIC CHARACTERISTICS; ISOTROPIC SCALING; MEMORY WINDOW; SWITCHING CONTROL;

ECONOMIC AND SOCIAL EFFECTS; HAFNIUM OXIDES;

RANDOM ACCESS STORAGE;

EID: 84883442060     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S.-G. Park et al., IEDM 2012;
2. X.P. Wang et al., IEDM 2012;
3. L. Goux et al., VLSI 2012, p159;
4. L. Pantisano et al., Microel. Eng. 88 (2011);
5. R. Degraeve et al., VLSI 2012;
6. D. Ielmini et al., IEEE Trans. Elect. Dev. 58(10) (2011);
7. Y.Y. Chen et al., IEDM (2012)