Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems

ACS Nano

Volumn 8, Issue 7, 2014, Pages 6998-7004

  Gao, Bin ^a   Bi, Yingjie ^a   Chen, Hong Yu ^b   Liu, Rui ^a   Huang, Peng ^a   Chen, Bing ^a   Liu, Lifeng ^a   Liu, Xiaoyan ^a   Yu, Shimeng ^c   Wong, H S Philip ^b   Kang, Jinfeng ^a  

^a PEKING UNIVERSITY   (China)

^b Stanford University   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

3D integration; memory; metal oxide; neuromorphic computation; resistive switching; synapse; synaptic device

Indexed keywords

DATA STORAGE EQUIPMENT; ENERGY UTILIZATION; PATTERN RECOGNITION; THREE DIMENSIONAL INTEGRATED CIRCUITS;

3-D INTEGRATION; METAL OXIDES; NEUROMORPHIC; RESISTIVE SWITCHING; SYNAPSE; SYNAPTIC DEVICE;

SWITCHING SYSTEMS;

OXIDE;

ARTIFICIAL NEURAL NETWORK; BIOMIMETICS; CHEMISTRY; DEVICES; NANOTECHNOLOGY; SYNAPSE;

BIOMIMETICS; NANOTECHNOLOGY; NEURAL NETWORKS (COMPUTER); OXIDES; SYNAPSES;

EID: 84904757475     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501824r     Document Type: Article

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