A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 1, 2003, Pages 155-158

  Arsovski, Igor ^a,b   Chandler, Trevis ^a,b   Sheikholeslami, Ali ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

Associative memories; Content addressable memory (CAM); High density; Low power; Match line sensing; Storage; Ternary

Indexed keywords

COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; LEAKAGE CURRENTS;

MATCH-LINE SENSING; SEARCH-LINES; TERNARY CONTENT-ADDRESSABLE MEMORY;

ASSOCIATIVE STORAGE;

EID: 0037245512     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.806264     Document Type: Article

References (5)

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