Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Matsunaga, Shoun ^a   Katsumata, Akira ^a   Natsui, Masanori ^a   Endoh, Tetsuo ^a   Ohno, Hideo ^a   Hanyu, Takahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL CIRCUITS; CRITICAL PATHS; HIGH-SPEED; MAGNETORESISTANCE RATIO; NON-VOLATILE; SWITCHING DELAY; TERNARY CONTENT ADDRESSABLE MEMORIES;

LOGIC GATES;

MAGNETIC DEVICES;

EID: 84861743488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3677875     Document Type: Conference Paper

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