Magnetic content addressable memory design for wide array structure

IEEE Transactions on Magnetics

Volumn 47, Issue 10, 2011, Pages 3864-3867

  Wang, Weizhong ^a  

^a University of Wisconsin Milwaukee   (United States)

Author keywords

Content addressable memory (CAM); magnetic device; magnetic tunneling junctions (MTJs); memories array

Indexed keywords

MAGNETIC DEVICES; MAGNETISM; MEMORY ARCHITECTURE; MOSFET DEVICES;

ARRAY ARCHITECTURE; ARRAY STRUCTURES; GATE VOLTAGES; MAGNETIC TUNNELING JUNCTIONS; MOSFETS; PRACTICAL USE; SUB-THRESHOLD CURRENT; TUNNELING RESISTANCE;

ASSOCIATIVE STORAGE;

EID: 80053540382     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2011.2158405     Document Type: Article

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