Corrigendum to ‘Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell’ [Sol. Energy Mater. Sol. Cells 139 (2015) 95–100](S0927024815001324)(10.1016/j.solmat.2015.03.017);Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell

Solar Energy Materials and Solar Cells

Volumn 139, Issue , 2015, Pages 95-100

  Hussain, Babar ^a   Ebong, Abasifreke ^a   Ferguson, Ian ^a,b  

^a University of North Carolina at Charlotte   (United States)

^b MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

Antireflection coating; Heterojunction; MOCVD; PC1D; Silicon solar cell; Zinc oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; ANTIREFLECTION COATINGS; GALLIUM; GALLIUM COMPOUNDS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SILICON COMPOUNDS; SILICON SOLAR CELLS; ZINC COATINGS; ZINC OXIDE;

FILL FACTOR; GROWTH WINDOW; HETEROJUNCTION SOLAR CELLS; OPTICAL CHARACTERIZATION; OPTIMIZED PARAMETER; PC1D; PROCESSING COSTS; SILICON-BASED;

SOLAR CELLS;

EID: 84926142003     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2018.10.008     Document Type: Erratum

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