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Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

Activation energy of heterojunction diode currents in the limit of interface recombination

(1) Scheer, R a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND OFFSETS; DIODE CURRENTS; ENERGY-BAND DIAGRAM; FERMI LEVEL PINNING; HETEROJUNCTION DIODES; INTERFACE RECOMBINATION; MINORITY CARRIER; P-N HETEROJUNCTIONS; POTENTIAL BARRIERS; SATURATION CURRENT; SHOCKLEY-READ-HALL RECOMBINATIONS;

ENERGY GAP; FERMI LEVEL; FERMIONS; HETEROJUNCTIONS; SEMICONDUCTOR DIODES;

ACTIVATION ENERGY;

EID: 66549099141 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3126523 Document Type: Article

Times cited : (166)

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