SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Interface recombination in heterojunction solar cells: Influence of buffer layer thickness

(3) Wilhelm, Helena a Schock, Hans Werner a Scheer, Roland b

a HAHN MEITNER INSTITUT (Germany)

b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BUFFER LAYER THICKNESS; CONDUCTION BAND OFFSET; DIODE CURRENTS; DIODE QUALITY FACTOR; HETEROJUNCTION SOLAR CELLS; HETEROSTRUCTURES; INTERFACE RECOMBINATION; RECOMBINATION PARAMETERS; RECOMBINATION VELOCITY; SATURATION CURRENT; THEORETICAL APPROACH;

ACTIVATION ANALYSIS; BUFFER LAYERS; DIODES; ELECTRON MOBILITY; HETEROJUNCTIONS; SOLAR CELLS;

ACTIVATION ENERGY;

EID: 79955718467 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554409 Document Type: Article

Times cited : (60)

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