SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 7, Issue 14, 2015, Pages 6255-6260

Thickness-dependent mobility in two-dimensional MoS2 transistors

(3) Lembke, Dominik a Allain, Adrien a Kis, Andras a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; SULFUR COMPOUNDS;

FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; INVERSION SYMMETRY; MOLYBDENUM DISULPHIDE; SUBSTRATE ROUGHNESS; TECHNOLOGICAL APPLICATIONS; TWO DIMENSIONAL (2 D); VERTICAL DIRECTION;

FIELD EFFECT TRANSISTORS;

EID: 84926049996 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr06331g Document Type: Article

Times cited : (78)

References (31)

1
- 79952406873
- B. Radisavljevic A. Radenovic J. Brivio V. Giacometti A. Kis Nat. Nanotechnol. 2011 6 147 150
- (2011) Nat. Nanotechnol. , vol.6 , pp. 147-150
- Radisavljevic, B.¹ Radenovic, A.² Brivio, J.³ Giacometti, V.⁴ Kis, A.⁵

2
- 84869074729
- Q. H. Wang K. Kalantar-Zadeh A. Kis J. N. Coleman M. S. Strano Nat. Nanotechnol. 2012 7 699 712
- (2012) Nat. Nanotechnol. , vol.7 , pp. 699-712
- Wang, Q.H.¹ Kalantar-Zadeh, K.² Kis, A.³ Coleman, J.N.⁴ Strano, M.S.⁵

3
- 7444220645
- K. S. Novoselov A. K. Geim S. V. Morozov D. Jiang Y. Zhang S. V. Dubonos I. V. Grigorieva A. A. Firsov Science 2004 306 666 669
- (2004) Science , vol.306 , pp. 666-669
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

4
- 80052790285
- Y. Yoon K. Ganapathi S. Salahuddin Nano Lett. 2011 11 3768 3773
- (2011) Nano Lett. , vol.11 , pp. 3768-3773
- Yoon, Y.¹ Ganapathi, K.² Salahuddin, S.³

5
- 77957204738
- K. F. Mak C. Lee J. Hone J. Shan T. F. Heinz Phys. Rev. Lett. 2010 105 136805
- (2010) Phys. Rev. Lett. , vol.105 , pp. 136805
- Mak, K.F.¹ Lee, C.² Hone, J.³ Shan, J.⁴ Heinz, T.F.⁵

6
- 84864433660
- B. Radisavljevic M. B. Whitwick A. Kis Appl. Phys. Lett. 2012 101 043103
- (2012) Appl. Phys. Lett. , vol.101 , pp. 043103
- Radisavljevic, B.¹ Whitwick, M.B.² Kis, A.³

7
- 84555223620
- B. Radisavljevic M. B. Whitwick A. Kis ACS Nano 2011 5 9934 9938
- (2011) ACS Nano , vol.5 , pp. 9934-9938
- Radisavljevic, B.¹ Whitwick, M.B.² Kis, A.³

8
- 84866027034
- H. Wang L. Yu Y.-H. Lee Y. Shi A. Hsu M. L. Chin L.-J. Li M. Dubey J. Kong T. Palacios Nano Lett. 2012 12 4674 4680
- (2012) Nano Lett. , vol.12 , pp. 4674-4680
- Wang, H.¹ Yu, L.² Lee, Y.-H.³ Shi, Y.⁴ Hsu, A.⁵ Chin, M.L.⁶ Li, L.-J.⁷ Dubey, M.⁸ Kong, J.⁹ Palacios, T.¹⁰

9
- 84907881643
- D. Krasnozhon D. Lembke C. Nyffeler Y. Leblebici A. Kis Nano Lett. 2014 14 5905 5911
- (2014) Nano Lett. , vol.14 , pp. 5905-5911
- Krasnozhon, D.¹ Lembke, D.² Nyffeler, C.³ Leblebici, Y.⁴ Kis, A.⁵

10
- 84870438813
- D. Lembke A. Kis ACS Nano 2012 6 10070 10075
- (2012) ACS Nano , vol.6 , pp. 10070-10075
- Lembke, D.¹ Kis, A.²

11
- 84880234625
- O. Lopez-Sanchez D. Lembke M. Kayci A. Radenovic A. Kis Nat. Nanotechnol. 2013 8 497 501
- (2013) Nat. Nanotechnol. , vol.8 , pp. 497-501
- Lopez-Sanchez, O.¹ Lembke, D.² Kayci, M.³ Radenovic, A.⁴ Kis, A.⁵

12
- 84555197340
- S. Bertolazzi J. Brivio A. Kis ACS Nano 2011 5 9703 9709
- (2011) ACS Nano , vol.5 , pp. 9703-9709
- Bertolazzi, S.¹ Brivio, J.² Kis, A.³

13
- 84881596995
- S.-L. Li K. Wakabayashi Y. Xu S. Nakaharai K. Komatsu W.-W. Li Y.-F. Lin A. Aparecido-Ferreira K. Tsukagoshi Nano Lett. 2013 13 3546 3552
- (2013) Nano Lett. , vol.13 , pp. 3546-3552
- Li, S.-L.¹ Wakabayashi, K.² Xu, Y.³ Nakaharai, S.⁴ Komatsu, K.⁵ Li, W.-W.⁶ Lin, Y.-F.⁷ Aparecido-Ferreira, A.⁸ Tsukagoshi, K.⁹

14
- 84896779852
- J. Kang W. Liu K. Banerjee Appl. Phys. Lett. 2014 104 093106
- (2014) Appl. Phys. Lett. , vol.104 , pp. 093106
- Kang, J.¹ Liu, W.² Banerjee, K.³

15
- 84873606296
- W. Bao X. Cai D. Kim K. Sridhara M. S. Fuhrer Appl. Phys. Lett. 2013 102 042104
- (2013) Appl. Phys. Lett. , vol.102 , pp. 042104
- Bao, W.¹ Cai, X.² Kim, D.³ Sridhara, K.⁴ Fuhrer, M.S.⁵

16
- 84877287100
- D. Jariwala V. K. Sangwan D. J. Late J. E. Johns V. P. Dravid T. J. Marks L. J. Lauhon M. C. Hersam Appl. Phys. Lett. 2013 102 173107
- (2013) Appl. Phys. Lett. , vol.102 , pp. 173107
- Jariwala, D.¹ Sangwan, V.K.² Late, D.J.³ Johns, J.E.⁴ Dravid, V.P.⁵ Marks, T.J.⁶ Lauhon, L.J.⁷ Hersam, M.C.⁸

17
- 84884215670
- B. W. H. Baugher H. O. H. Churchill Y. Yang P. Jarillo-Herrero Nano Lett. 2013 13 4212 4216
- (2013) Nano Lett. , vol.13 , pp. 4212-4216
- Baugher, B.W.H.¹ Churchill, H.O.H.² Yang, Y.³ Jarillo-Herrero, P.⁴

18
- 84897998266
- H. Schmidt S. Wang L. Chu M. Toh R. Kumar W. Zhao A. H. Castro Neto J. Martin S. Adam B. Özyilmaz G. Eda Nano Lett. 2014 14 1909 1913
- (2014) Nano Lett. , vol.14 , pp. 1909-1913
- Schmidt, H.¹ Wang, S.² Chu, L.³ Toh, M.⁴ Kumar, R.⁵ Zhao, W.⁶ Castro Neto, A.H.⁷ Martin, J.⁸ Adam, S.⁹ Özyilmaz, B.¹⁰ Eda, G.¹¹

19
- 84859524063
- H. Qiu L. Pan Z. Yao J. Li Y. Shi X. Wang Appl. Phys. Lett. 2012 100 123104
- (2012) Appl. Phys. Lett. , vol.100 , pp. 123104
- Qiu, H.¹ Pan, L.² Yao, Z.³ Li, J.⁴ Shi, Y.⁵ Wang, X.⁶

20
- 84885871106
- P. Miró M. Ghorbani-Asl T. Heine Adv. Mater. 2013 25 5473 5474
- (2013) Adv. Mater. , vol.25 , pp. 5473-5474
- Miró, P.¹ Ghorbani-Asl, M.² Heine, T.³

21
- 79951840727
- M. M. Benameur B. Radisavljevic J.-S. Heron S. Sahoo H. Berger A. Kis Nanotechnology 2011 22 125706
- (2011) Nanotechnology , vol.22 , pp. 125706
- Benameur, M.M.¹ Radisavljevic, B.² Heron, J.-S.³ Sahoo, S.⁴ Berger, H.⁵ Kis, A.⁶

22
- 84874594683
- M. S. Fuhrer J. Hone Nat. Nanotechnol. 2013 8 146 147
- (2013) Nat. Nanotechnol. , vol.8 , pp. 146-147
- Fuhrer, M.S.¹ Hone, J.²

23
- 84874640657
- B. Radisavljevic A. Kis Nat. Nanotechnol. 2013 8 147 148
- (2013) Nat. Nanotechnol. , vol.8 , pp. 147-148
- Radisavljevic, B.¹ Kis, A.²

24
- 84883179670
- B. Radisavljevic A. Kis Nat. Mater. 2013 12 815 820
- (2013) Nat. Mater. , vol.12 , pp. 815-820
- Radisavljevic, B.¹ Kis, A.²

25
- 84872115141
- S. Das H.-Y. Chen A. V. Penumatcha J. Appenzeller Nano Lett. 2012 13 100 105
- (2012) Nano Lett. , vol.13 , pp. 100-105
- Das, S.¹ Chen, H.-Y.² Penumatcha, A.V.³ Appenzeller, J.⁴

26
- 84907964946
- R. Yang Z. Wang P. X. L. Feng Nanoscale 2014 6 12383 12390
- (2014) Nanoscale , vol.6 , pp. 12383-12390
- Yang, R.¹ Wang, Z.² Feng, P.X.L.³

27
- 84863011344
- W. S. Yun S. W. Han S. C. Hong I. G. Kim J. D. Lee Phys. Rev. B: Condens. Matter 2012 85 033305
- (2012) Phys. Rev. B: Condens. Matter , vol.85 , pp. 033305
- Yun, W.S.¹ Han, S.W.² Hong, S.C.³ Kim, I.G.⁴ Lee, J.D.⁵

28
- 84908454042
- N. Kosuke N. Tomonori K. Koji T. Akira Appl. Phys. Express 2009 2 025003
- (2009) Appl. Phys. Express , vol.2 , pp. 025003
- Kosuke, N.¹ Tomonori, N.² Koji, K.³ Akira, T.⁴

29
- 40749140712
- S. V. Morozov K. S. Novoselov M. I. Katsnelson F. Schedin D. C. Elias J. A. Jaszczak A. K. Geim Phys. Rev. Lett. 2008 100 016602
- (2008) Phys. Rev. Lett. , vol.100 , pp. 016602
- Morozov, S.V.¹ Novoselov, K.S.² Katsnelson, M.I.³ Schedin, F.⁴ Elias, D.C.⁵ Jaszczak, J.A.⁶ Geim, A.K.⁷

30
- 77957908617
- C. R. Dean A. F. Young I. Meric C. Lee L. Wang S. Sorgenfrei K. Watanabe T. Taniguchi P. Kim K. L. Shepard J. Hone Nat. Nanotechnol. 2010 5 722 726
- (2010) Nat. Nanotechnol. , vol.5 , pp. 722-726
- Dean, C.R.¹ Young, A.F.² Meric, I.³ Lee, C.⁴ Wang, L.⁵ Sorgenfrei, S.⁶ Watanabe, K.⁷ Taniguchi, T.⁸ Kim, P.⁹ Shepard, K.L.¹⁰ Hone, J.¹¹

31
- 84887289719
- Q. Yue Z. Shao S. Chang J. Li Nanoscale Res. Lett. 2013 8 1 7
- (2013) Nanoscale Res. Lett. , vol.8 , pp. 1-7
- Yue, Q.¹ Shao, Z.² Chang, S.³ Li, J.⁴

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