Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

Applied Physics Letters

Volumn 106, Issue 2, 2015, Pages

  Fathipour, S ^a   Remskar, M ^b   Varlec, A ^b   Ajoy, A ^a   Yan, R ^c   Vishwanath, S ^a   Rouvimov, S ^a   Hwang, W S ^d   Xing, H G ^a   Jena, D ^a   Seabaugh, A ^a  

^a University of Notre Dame   (United States)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c School of Operations Research and Industrial Engineering   (United States)

^d Hankuk Aviation University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; MOLYBDENUM COMPOUNDS; NANORIBBONS; NANOTUBES; TRANSMISSION ELECTRON MICROSCOPY; YARN;

CHEMICAL TRANSPORT; ELECTRICAL MEASUREMENT; FABRICATION AND CHARACTERIZATIONS; FIELD EFFECT TRANSISTOR (FETS); LONG CHANNEL TRANSISTORS; ON/OFF CURRENT RATIO; PHOTOCURRENT MEASUREMENT; SHORT-CIRCUIT PHOTOCURRENT;

FIELD EFFECT TRANSISTORS;

EID: 84923932462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4906066     Document Type: Article

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