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AIP Advances

Volumn 4, Issue 9, 2014, Pages

MoS2 nanotube field effect transistors

(6) Strojnik, M a Kovic, A a Mrzel, A a Buh, J a Strle, J a Mihailovic, D a,b

a JO EF STEFAN INSTITUTE (Slovenia)

b Centre of Excellence in Nanoscience and Nanotechnology (Nanocenter) (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOSENSORS; NANOTUBES; TUNGSTEN COMPOUNDS;

ELECTRON TRANSPORT; FABRICATION TECHNIQUE; LAYERED CRYSTALS; NANOTUBE FIELD EFFECT TRANSISTORS; ON/OFF RATIO; SIMILAR NUMBERS; SINGLE NANOTUBES; TWO STEP SYNTHESIS METHOD;

FIELD EFFECT TRANSISTORS;

EID: 85006052062 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4894440 Document Type: Article

Times cited : (52)

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