Exfoliated MoTe2 field-effect transistor

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2013, Pages 115-116

  Fathipour, Sara ^a   Hwang, Wan Sik ^a,b   Kosel, Thomas ^a   Xing, Huili Grace ^a   Haensch, Wilfried ^b   Jena, Debdeep ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84890021289     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2013.6633820     Document Type: Conference Paper

References (1)

1. S. Kim, A. Konar, W. S. Hwang, J. Hak Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena,W. Choi, K. Kim, "High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals," Nature Communications 3, 1011, (Aug 2012).