SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 5, Issue 26, 2015, Pages 20538-20544

Effect of vacancies in monolayer MoS2 on electronic properties of Mo-MoS2 contacts

(3) Feng, Li Ping a Su, Jie a Liu, Zheng Tang a

a NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; INTERFACE STATES; MOLYBDENUM; MONOLAYERS; NANOELECTRONICS; SCHOTTKY BARRIER DIODES; VACANCIES;

ELECTRONIC NATURES; FIRST-PRINCIPLES CALCULATION; INJECTION EFFICIENCY; INTRINSIC DEFECTS; NANOELECTRONIC DEVICES; PARTIAL DENSITY OF STATE; SCHOTTKY BARRIERS; VACANCY FORMATION;

MOLYBDENUM COMPOUNDS;

EID: 84923878636 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c4ra15218b Document Type: Article

Times cited : (37)

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