SCOPUS 정보 검색 플랫폼

Volumn 419, Issue , 2013, Pages 66-75

Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X=S, Se, Te)

(2) Kumar, Ashok a Ahluwalia, P K a

a HIMACHAL PRADESH UNIVERSITY (India)

Author keywords

Chalcogenide; DFT; Dielectric properties; Electronic structure; Honeycomb structure; Mechanical strain

Indexed keywords

BAND GAP TRANSITION; DEFORMATION POTENTIAL; DFT; DIELECTRIC FUNCTIONS; EXCITON-BINDING ENERGY; MECHANICAL STRAIN; STATIC DIELECTRIC CONSTANTS; ULTIMATE TENSILE STRENGTH;

BINDING ENERGY; CHALCOGENIDES; DENSITY FUNCTIONAL THEORY; DIELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HONEYCOMB STRUCTURES; MOLYBDENUM COMPOUNDS; MONOLAYERS; TENSILE STRENGTH; TWO DIMENSIONAL;

STRAIN;

EID: 84877253068 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2013.03.029 Document Type: Article

Times cited : (101)

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