Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (1 0 0) substrates by MOCVD

Journal of Alloys and Compounds

Volumn 499, Issue 1, 2010, Pages 75-79

  Kong, Lingyi ^a   Ma, Jin ^a   Yang, Fan ^a   Luan, Caina ^a   Zhu, Zhen ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Band gap; Ga2xIn2(1 x)O3 film; MOCVD; ZrO2 substrate

Indexed keywords

AMORPHOUS STRUCTURES; ATOMIC RATIO; BAND GAP; BAND GAPS; BIXBYITE; ELECTRICAL AND OPTICAL PROPERTIES; GA CONTENT; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; POLYCRYSTALLINE STRUCTURE; STRUCTURE ANALYSIS; VISIBLE RANGE;

AMORPHOUS MATERIALS; ELECTRIC PROPERTIES; ENERGY GAP; FILM PREPARATION; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SUBSTRATES; ZIRCONIUM ALLOYS;

OPTICAL FILMS;

EID: 77953130570     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.02.092     Document Type: Article

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