Passivation analysis of silicon surfaces via sol - Gel derived Al-rich ZnO film

Semiconductor Science and Technology

Volumn 30, Issue 1, 2015, Pages

  Khan, Firoz ^a   Baek, Seong Ho ^a   Hyun Kim, Jae ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

Al rich zinc oxide; chemical passivation; minority carrier lifetime; passivating layers; surface recombination velocity

Indexed keywords

AMORPHOUS MATERIALS; CARRIER LIFETIME; CHEMICAL BONDS; COST EFFECTIVENESS; DANGLING BONDS; ELECTRON TUNNELING; INTERFACES (MATERIALS); METALLIC FILMS; PASSIVATION; SILICON; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

CHEMICAL PASSIVATION; ELEMENTAL COMPOSITIONS; FIELD EFFECT PASSIVATION; HYDROGEN CONCENTRATION; MINORITY CARRIER LIFETIMES; PASSIVATING LAYER; SOLAR-CELL APPLICATIONS; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM;

EID: 84920378566     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/1/015012     Document Type: Article

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