Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

IEEE Transactions on Electron Devices

Volumn 61, Issue 12, 2014, Pages 3978-3984

  Diab, Amer ^a   Torres Sevilla, Galo A ^a   Cristoloveanu, Sorin ^b   Hussain, Muhammad Mustafa ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b IMEP LAHC   (France)

Author keywords

FinFET; flexible; gate leakage; high temperature; mobility; Silicon on insulator (SOI).

Indexed keywords

CARRIER MOBILITY; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; FINS (HEAT EXCHANGE); FLEXIBLE ELECTRONICS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; SILICON; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THRESHOLD VOLTAGE;

FINFET; FLEXIBLE; GATE LEAKAGES; HIGH TEMPERATURE; SILICON-ON- INSULATORS (SOI);

MOSFET DEVICES;

EID: 84919497646     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2360659     Document Type: Article

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