Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1301-1304

  Wan, J ^a   Le Royer, C ^b   Zaslavsky, A ^c   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c Brown University   (United States)

Author keywords

Field effect transistor; Fully depleted; Gate induced drain leakage; Silicon on insulator; Tunneling

Indexed keywords

BAND TO BAND TUNNELING; DRAIN BIAS; FIELD EFFECT DIODE; FULLY DEPLETED; GATE-INDUCED DRAIN LEAKAGE; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; SILICON ON INSULATOR; SILICON-ON-INSULATORS; THICK GATE OXIDES; TUNNELING DIODES; TUNNELING FIELD-EFFECT TRANSISTORS;

DRAIN CURRENT; FIELD EFFECT SEMICONDUCTOR DEVICES; FINITE DIFFERENCE METHOD; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS; TUNNEL DIODES;

MOSFET DEVICES;

EID: 79958030404     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.092     Document Type: Conference Paper

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