GIDL (Gate-Induced Drain Leakage) and parasitic schottky barrier leakage elimination in aggressively scaled HfO2/TiN FinFET devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 725-728

  Hoffmann, T ^a   Doornbos, G ^b   Ferain, I ^c   Collaert, N ^a   Zimmerman, P ^b   Goodwin, M ^b   Rooyackers, R ^a   Kottantharayil, A ^a   Yim, Y ^b   Dixit, A ^c   De Meyer, K ^c   Jurczak, M ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FINFET DEVICES; GATE-INDUCED DRAIN LEAKAGE; OFF-STATE CURRENT;

DOPING (ADDITIVES); ELECTRIC CURRENTS; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

MESFET DEVICES;

EID: 33847394370     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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