Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 573-576

  Pretet, J ^a   Vandooren, A ^b   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FD-SOI DEVICES; HIGH-K DIELECTRIC; METAL GATE; TEMPERATURE OPERATION;

EID: 84907709299     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256941     Document Type: Conference Paper

References (7)

1. J. Kedzierski et al., "Metal-gate FinFet and Fully-depleted SOI devices using total gate silicidation", IEDM 2002 Tech. Dig.,p. 247-250.
2. S. Moniray et al., "SON (Si)icon-On-Nothing) PMOSFETs with totally silicided (CoSi2) Polysilicon on 5-nm-thick Si films: The simplest way to integration of Metal gates on thin FD channels", IEDM 2002 Tech. Dig., p. 263-266.
3. Z. Krivokapic et al., "Nickel silictde metal gate FDSOI devices with improved Gate oxide leakage", IEDM 2002 Tech. Dig.,p. 271-274
4. A. Vandooren et al, "A 50nm TiN gate fully-depleted SOI CMOS technology with HfO, gate dielectric and elevated Source/Drain extensions. ", to be published at the IEEE Silicon Nanoelectronic Workshop 2003, Kyoto, Japan, 2003.
5. A. Vandooren et al., "Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric and elevated Source/Dram extensions", accepted for publication in IEEE Electron Device Letters, May 2003.
6. S. Cristoloveanu and S,S. Li, "Electrical Characterization of Silicon-On-Insulator Materials and Devices", Kluwer, 1995.
7. G. Groeseneken at al., "Temperature dependence of threshold voltage in thin-film SOI MOSFETs", IEEE Elec. Dev. Let, vol. 11, n°8, 1999.