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Volumn 14, Issue 9, 2014, Pages 5206-5211

Selective-area epitaxy of pure wurtzite InP nanowires: High quantum efficiency and room-temperature lasing

Author keywords

III V semiconductors; nanowire laser; nanowires; quantum efficiency; selective area metal organic vapor phase epitaxy; wurtzite

Indexed keywords

EFFICIENCY; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; OPTOELECTRONIC DEVICES; ORGANIC LASERS; ORGANOMETALLICS; QUANTUM OPTICS; ZINC SULFIDE;

EID: 84912525992     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5021409     Document Type: Article
Times cited : (205)

References (41)
  • 34
    • 77956955253 scopus 로고
    • Carrier Lifetime in III-V Semiconductors
    • In; Academic Press: New York, Vol. Chapter 2
    • Ahrenkiel, R. K. Carrier Lifetime in III-V Semiconductors. In Semiconductors and Semimetals; Academic Press: New York, 1993; Vol. 39, Chapter 2, pp 39-150.
    • (1993) Semiconductors and Semimetals , vol.39 , pp. 39-150
    • Ahrenkiel, R.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.