Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Nature Communications

Volumn 4, Issue , 2013, Pages

  Mayer, Benedikt ^a   Rudolph, Daniel ^a   Schnell, Joscha ^a   Morkötter, Stefanie ^a   Winnerl, Julia ^a   Treu, Julian ^a   Müller, Kai ^a   Bracher, Gregor ^a   Abstreiter, Gerhard ^a,b   Koblmüller, Gregor ^a   Finley, Jonathan J ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRE;

ARSENIC; GALLIUM; LASER; NANOTECHNOLOGY; OPTICAL PROPERTY; SEMICONDUCTOR INDUSTRY; TECHNOLOGICAL DEVELOPMENT; TEMPERATURE PROFILE; ULTRAVIOLET RADIATION;

ARTICLE; CRYSTAL STRUCTURE; DENSITY; ELECTRON; EXCITATION; FIELD EFFECT TRANSISTOR; HEATING; INFRARED RADIATION; LASER; LIGHT; RAMAN SPECTROMETRY; REFRACTION INDEX; ROOM TEMPERATURE; SEMICONDUCTOR; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84890101199     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3931     Document Type: Article

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