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Volumn 101, Issue 2, 2012, Pages

Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowires

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CORE-SHELL NANOWIRES; DOUBLE HETEROSTRUCTURES; GAAS; MINORITY CARRIER LIFETIMES; ROOM TEMPERATURE; SINGLE NANOWIRES; SURFACE RECOMBINATION VELOCITIES; TIME-RESOLVED PHOTOLUMINESCENCE; TWIN-FREE; UPPER LIMITS;

EID: 84863900197     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4735002     Document Type: Article
Times cited : (92)

References (25)
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  • 13
    • 0026840042 scopus 로고
    • 10.1016/0038-1101(92)90228-5
    • R. K. Ahrenkiel, Solid-State Electron. 35, 239 (1992). 10.1016/0038-1101(92)90228-5
    • (1992) Solid-State Electron. , vol.35 , pp. 239
    • Ahrenkiel, R.K.1
  • 18
    • 21544462922 scopus 로고
    • 10.1063/1.355769
    • L. Pavesi and M. Guzzi, J. Appl. Phys. 75 (10), 4779 (1994). 10.1063/1.355769
    • (1994) J. Appl. Phys. , vol.75 , Issue.10 , pp. 4779
    • Pavesi, L.1    Guzzi, M.2
  • 24
    • 77956955253 scopus 로고
    • in, edited by K. A. Richard and S. L. Mark (Elsevier), Vol
    • R. K. Ahrenkiel, in Semiconductors and Semimetals, edited by, K. A. Richard, and, S. L. Mark, (Elsevier, 1993), Vol. 39, p. 39.
    • (1993) Semiconductors and Semimetals , vol.39 , pp. 39
    • Ahrenkiel, R.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.