Anion-controlled passivation effect of the atomic layer deposited ZnO films by F substitution to O-related defects on the electronic band structure for transparent contact layer of solar cell applications

Solar Energy Materials and Solar Cells

Volumn 132, Issue , 2015, Pages 403-409

  Choi, Yong June ^a   Kang, Kyung Mun ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

Anion controlled chemistry; Atomic layer deposition; Band gap narrowing; Band gap widening; Fluorine doping; Zinc oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; CARRIER TRANSPORT; CHEMICAL ANALYSIS; CONDUCTION BANDS; DEGRADATION; ELECTRONIC STRUCTURE; ENERGY GAP; IONS; METALLIC FILMS; PASSIVATION; SEMICONDUCTOR DOPING; SOLAR CELLS; SURFACE ANALYSIS; ZINC OXIDE;

ATOMIC LAYER DEPOSITED; BAND GAP NARROWING; BAND GAP WIDENING; CHARGE-CARRIER TRANSPORT; ELECTRON CONCENTRATION; ELECTRONIC BAND STRUCTURE; FLUORINE DOPING; SOLAR-CELL APPLICATIONS;

FLUORINE;

EID: 84908565256     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.09.029     Document Type: Article

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