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Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature

(6) Wong, L M a Chiam, S Y a Huang, J Q b Wang, S J a Pan, J S a Chim, W K c

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b DATA STORAGE INSTITUTE (Singapore)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARY SCATTERING; INTERSTITIALS; OXIDE ELECTRODES; OXYGEN PRESSURE; PHOTOVOLTAIC DEVICES; PLASTIC DEVICES; PULSED LASER; ROOM TEMPERATURE; SCATTERING CENTERS; SOLAR SPECTRUM; STRUCTURAL CHANGE;

ELECTRODES; ELECTRON MOBILITY; GALLIUM; GRAIN BOUNDARIES; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION; SCATTERING; TRANSPARENCY; ZINC; ZINC OXIDE;

OXYGEN;

EID: 78751506010 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3541885 Document Type: Article

Times cited : (45)

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