Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Ye, J D ^a   Gu, S L ^a   Zhu, S M ^a   Liu, S M ^a   Zheng, Y D ^a   Zhang, R ^a   Shi, Y ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); FERMI LEVEL; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

BAND-GAP RENORMALIZATION (BGR) EFFECTS; ENERGY-BAND STRUCTURE; OPTICAL TRANSITION; PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

ZINC OXIDE;

EID: 20844448381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1928322     Document Type: Article

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